DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

Risultati: 113
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Toshiba MOSFET Power MOSFET N-Channel 2.567A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 20 A 156 mOhms - 30 V, 30 V 3 V 55 nC - 55 C + 150 C 156 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 7.464A magazzino
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 5.8 A 890 mOhms - 30 V, 30 V 2.5 V 11 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC 5.745A magazzino
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.2 A 820 mOhms - 30 V, 30 V 2.7 V 12 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch 800V 1400pF 23nC 11.5A 45W 2.476A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11.5 A 380 mOhms - 20 V, 20 V 3 V 23 nC - 55 C + 150 C 45 W Enhancement DTMOSIV Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ 991A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 15.8 A 230 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 1.657A magazzino
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel

Toshiba MOSFET MOSFET NChannel 068ohm DTMOS 20A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS 47A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 13.7 A 250 mOhms - 30 V, 30 V 4.5 V 40 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube

Toshiba MOSFET Power MOSFET N-Channel 34A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 17.3 A 170 mOhms - 30 V, 30 V 2.5 V 45 nC - 55 C + 150 C 165 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel 192A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=35W F=1MHZ 551A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 950 mOhms - 20 V, 20 V 3 V 13 nC - 55 C + 150 C 35 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 9.7A 80W FET 600V 700pF 20nC 449A magazzino
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=80W F=1MHZ 1.788A magazzino
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 7.8 A 670 mOhms - 30 V, 30 V 2.5 V 16 nC - 55 C + 150 C 80 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Pb-F POWER MOSFET TRANSISTOR DTMOS DFN 8?8-OS PD=139W F=1MHZ 2.495A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 15.8 A 245 mOhms - 30 V, 30 V 3 V 43 nC - 55 C + 150 C 139 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET 600V DTMOS6 TO-247 40mohm 510A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 40 mOhms - 30 V, 30 V 4 V 85 nC + 150 C 297 W Enhancement Tube
Toshiba MOSFET 600V DTMOS6 TO-247 80mohm 149A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 80 mOhms - 30 V, 30 V 4 V 43 nC + 150 C 211 W Enhancement Tube
Toshiba MOSFET 600V DTMOS6 TO-247 125mohm 145A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 125 mOhms - 30 V, 30 V 4 V 28 nC + 150 C 150 W Enhancement Tube

Toshiba MOSFET Power MOSFET N-Channel 4.415A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 62 mOhms - 30 V, 30 V 3 V 135 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF 74A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3PL-3 N-Channel 1 Channel 600 V 100 A 15 mOhms - 30 V, 30 V 3.7 V 360 nC - 55 C + 150 C 797 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel 1.288A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si Through Hole TO-262-3 N-Channel 1 Channel 650 V 13.7 A 220 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A 1.587A magazzino
2.25010/02/2026 previsto
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DFN8x8-5 N-Channel 1 Channel 600 V 30.8 A 87 mOhms - 30 V, 30 V 3 V 105 nC + 150 C 240 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel 257A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 350 mOhms - 30 V, 30 V 3 V 25 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC 79A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 327 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 800V 1150pF 19nC 9.5A 40W 188A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 9.5 A 460 mOhms - 20 V, 20 V 3 V 19 nC - 55 C + 150 C 40 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC 61A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9.7 A 380 mOhms - 30 V, 30 V 3.7 V 20 nC - 55 C + 150 C 100 W Enhancement DTMOSIV Tube