GeneSiC Semiconductor SiCPAK™ F/G 1200V High-Power Modules
GeneSiC Semiconductor SiCPAK™ F/G 1200V High-Power Modules are designed for superior performance and robustness while meeting industry-standard footprints with pin-to-pin combability. These modules are robust, high-voltage, high-efficiency SiC MOSFETs, critical for reliable, harsh-environment, high-power applications. The SiCPAK™ F/G Modules enable expanded applications ranging from 10s kW to MW in rail, EV, fast charging, industry, solar, wind, and energy storage. Epoxy-resin potting technology provides high reliability and improved power/temperature cycling.
Features
- Double-implanted metal oxide semiconductor (DMOSFET)
- Monolithically-integrated junction barrier Schottky (JBS) rectifier
- Superior high-power performance
- Optimized low-inductance design with industry-standard press-fit connections with built-in NTC and pin-to-pin compatibility
- ‘Gen3 Fast’ SiC MOSFETs with industry-leading current density (A/mm2)
- Temperature independent switching
- Fast (low switching loss) and cool (low conduction losses)
- Long-term reliability
- Easy-to-parallel for high power (VTH stability)
- 1200V rated
- 5mΩ to 18mΩ drain-source on resistance range per switch at 18V
- Full-/half-bridge and 3L-T-NPC topology options
- Epoxy-resin potting technology for high reliability
- Improved temperature cycling
- Improved power cycling
- Size options
- 33.8mm x 62.8mm for the SiCPAK F
- 56.7mm x 62.8mm for the SiCPAK G
Applications
- Transportation
- Rail
- Ship-board
- Automotive
- EV
- Fast charging
- Power grids
- HVDC transmissions
- FACTS
- Industrial
- Power supplies
- Traction and welding
- Alternative energy
- Solar, wind, and energy storage
- Inverters
- Aerospace and defense
Related Products
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GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs
Developed using a proprietary trench-assisted planar technology for high-speed performance.
Pubblicato: 2024-09-19
| Aggiornato: 2025-02-19