Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Modalità canale
GeneSiC Semiconductor MOSFET SiC 1200V 18mohm TO-263-7 G3F SiC MOSFET 790A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 20mohm TO-LL G3F SiC MOSFET 1.949A magazzino
Min: 1
Mult.: 1
Nastrati: 1.200

SMD/SMT TO-LL N-Channel 650 V 20 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 25mohm TO-263-7 G3F SiC MOSFET 1.191A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 34mohm TO-263-7 G3F SiC MOSFET 1.552A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 40mohm TO-247-4 G3F SiC MOSFET 1.642A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 135mohm TO-263-7 G3F SiC MOSFET 1.565A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 18mohm TO-247-4 G3F SiC MOSFET
Scheda dati
435A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 20mohm TO-263-7 G3F SiC MOSFET 424A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 20mohm TO-247-4 G3F SiC MOSFET 565A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 20mohm TO-263-7 G3F SiC MOSFET 648A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 100 A 20 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 20mohm TO-247-4 G3F SiC MOSFET 1.112A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 90 A 20 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 25mohm TO-247-4 G3F SiC MOSFET 247A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 27mohm TO-263-7 G3F SiC MOSFET 778A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 78 A 27 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 27mohm TO-247-4 G3F SiC MOSFET 1.129A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 70 A 27 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 27mohm TO-LL G3F SiC MOSFET 1.200A magazzino
Min: 1
Mult.: 1
Nastrati: 1.200

SMD/SMT TO-LL N-Channel 650 V 27 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 34mohm TO-247-4 G3F SiC MOSFET 461A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 40mohm TO-263-7 G3F SiC MOSFET 786A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 40mohm TO-247-3 G3F SiC MOSFET 1.163A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 40mohm TO-263-7 G3F SiC MOSFET 775A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 57 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 40mohm TO-247-4 G3F SiC MOSFET 1.058A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 40mohm TO-LL G3F SiC MOSFET 1.055A magazzino
Min: 1
Mult.: 1
Nastrati: 1.200

SMD/SMT TO-LL N-Channel 650 V 40 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 55mohm TO-247-3 G3F SiC MOSFET 1.129A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 55mohm TO-263-7 G3F SiC MOSFET 755A magazzino
Min: 1
Mult.: 1
Nastrati: 800

GeneSiC Semiconductor MOSFET SiC 650V 55mohm TO-247-4 G3F SiC MOSFET 1.056A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 650V 55mohm TO-LL G3F SiC MOSFET 1.200A magazzino
Min: 1
Mult.: 1
Nastrati: 1.200