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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Modalità canale
GeneSiC Semiconductor MOSFET SiC 1200V 18mohm TO-263-7 G3F SiC MOSFET 785A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 34mohm TO-263-7 G3F SiC MOSFET 1.547A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 135mohm TO-263-7 G3F SiC MOSFET 1.498A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 18mohm TO-247-4 G3F SiC MOSFET
Scheda dati
428A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 20mohm TO-263-7 G3F SiC MOSFET 124A magazzino
80031/08/2026 previsto
Min: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 20mohm TO-247-4 G3F SiC MOSFET 560A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 25mohm TO-263-7 G3F SiC MOSFET 1.021A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 25mohm TO-247-4 G3F SiC MOSFET 247A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 34mohm TO-247-4 G3F SiC MOSFET 456A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 40mohm TO-263-7 G3F SiC MOSFET 786A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 40mohm TO-247-4 G3F SiC MOSFET 1.592A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 65mohm TO-263-7 G3F SiC MOSFET
Scheda dati
1.560A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 65mohm TO-247-4 G3F SiC MOSFET 473A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 75mohm TO-263-7 G3F SiC MOSFET 572A magazzino
Min: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 39 A 75 mOhms Enhancement
GeneSiC Semiconductor MOSFET SiC 1200V 75mohm TO-247-4 G3F SiC MOSFET 1.695A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 35 A 75 mOhms Enhancement