SiCPAK™ F/G 1200V High-Power Modules

GeneSiC Semiconductor SiCPAK™ F/G 1200V High-Power Modules are designed for superior performance and robustness while meeting industry-standard footprints with pin-to-pin combability. These modules are robust, high-voltage, high-efficiency SiC MOSFETs, critical for reliable, harsh-environment, high-power applications. The SiCPAK™ F/G Modules enable expanded applications ranging from 10s kW to MW in rail, EV, fast charging, industry, solar, wind, and energy storage. Epoxy-resin potting technology provides high reliability and improved power/temperature cycling.

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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs th - Tensione di soglia gate-source
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Serie
Confezione
GeneSiC Semiconductor Moduli MOSFET 1200V 5mohm Half-Bridge SiCPAK G SiC Module
Scheda dati
96A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK G Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 5mohm Half-Bridge SiCPAK G SiC Module, TIM
Scheda dati
93A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 216 A 4.6 mOhms 2.2 V - 40 C + 175 C 444 mW SiCPAK F Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 9mohm Full-Bridge SiCPAK G SiC Module
Scheda dati
96A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK G Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 9mohm Full-Bridge SiCPAK G SiC Module, TIM
Scheda dati
96A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 104 A 12.5 mOhms - 40 C + 175 C 216 W SiCPAK F Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 9mohm Half-Bridge SiCPAK F SiC Module
Scheda dati
71A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 9mohm Half-Bridge SiCPAK F SiC Module, TIM
Scheda dati
96A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 109 A 12.5 mOhms 2.7 V - 40 C + 175 C 238 W SiCPAK F Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 17mohm Half-Bridge SiCPAK F SiC Module
Scheda dati
96A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 17mohm Half-Bridge SiCPAK F SiC Module, TIM
Scheda dati
94A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 68 A 23 mOhms 2.2 V - 40 C + 175 C 170 W SiCPAK F Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 18mohm Full-Bridge SiCPAK F SiC Module
Scheda dati
96A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 18mohm Full-Bridge SiCPAK F SiC Module. TIM
Scheda dati
96A magazzino
Min: 1
Mult.: 1

SiC Press Fit SiCPAK N-Channel 1.2 kV 53 A 24 mOhms 2.2 V - 40 C + 175 C 106 W SiCPAK F Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module
Scheda dati
9617/04/2026 previsto
Min: 1
Mult.: 1

SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK G Tray
GeneSiC Semiconductor Moduli MOSFET 1200V 9mohm 3L-T-NPC SiCPAK G SiC Module, TIM
Scheda dati
9617/04/2026 previsto
Min: 1
Mult.: 1

SiC Press Fit SiCPAK G 1.2 kV 9.3 mOhms SiCPAK F Tray