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MACOM HEMT GaN

Gli HEMT (transistor ad alta mobilità elettronica) al GaN (nitruro di gallio) di Cree offrono maggiore densità di potenza e maggiori ampiezze di banda rispetto ai transistor a Si e GaAs. Il GaN presenta proprietà superiori rispetto al silicio o all'arsenuro di gallio, inclusa una maggiore tensione di breakdown, elevata velocità di deriva degli elettroni saturati e una maggiore conduttività termica.

Caratteristiche

  • High efficiency
  • High gain
  • Wide bandwidth capabilities
  • High breakdown voltage
  • High saturated electron drift velocity
  • High thermal conductivity

Applicazioni

  • 2-Way private radio
  • Broadband amplifiers
  • Cellular infrastructure
  • Test instrumentation
  • Class A and AB linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms
  • Satellite communications
  • PTP communications links
  • Marine radar
  • Pleasure craft radar
  • Port vessel traffic services
  • High-efficiency amplifiers

Comparison Chart

Grafico - MACOM HEMT GaN

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Pubblicato: 2014-07-17 | Aggiornato: 2025-08-26