Microchip MOSFET SiC

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Microchip Technology MOSFET SiC MOSFET SIC 700 V 15 mOhm TO-247-4
Scheda dati
150A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 1.9 V 215 nC - 55 C + 175 C 524 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 25 mOhm TO-247-4
Scheda dati
258A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 103 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 500 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 700 V 35 mOhm TO-268
Scheda dati
98A magazzino
Min: 1
Mult.: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 65 A 44 mOhms - 10 V, + 23 V 1.9 V 99 nC - 55 C + 175 C 206 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 40 mOhm TO-268
Scheda dati
44A magazzino
Min: 1
Mult.: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 64 A 50 mOhms - 10 V, + 23 V 1.8 V 137 nC - 55 C + 175 C 303 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 25 mOhm TO-268
Scheda dati
23A magazzino
Min: 1
Mult.: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 89 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 40 mOhm TO-247-4
Scheda dati
67A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 66 A 40 mOhms - 10 V, + 23 V 2.6 V 137 nC - 55 C + 175 C 323 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 20 mOhm TO-247-4 Notch
Scheda dati
115A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 97 A 24 mOhms - 10 V, 21 V 3 V 136 nC - 55 C + 175 C 416 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch
Scheda dati
65A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 81 A 33 mOhms - 10 V, 21 V 5 V 109 nC - 55 C + 175 C 357 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 30 mOhm TO-247-4 Notch
Scheda dati
115A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 40 mOhms - 10 V, 21 V 5 V 91 nC - 55 C + 175 C 310 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch
Scheda dati
115A magazzino
Min: 1
Mult.: 1

Thorugh Hole TO-247-4 N-Channel 1 Channel 1.2 kV 54 A 53 mOhms - 10 V, 21 V 5 V 69 nC - 55 C + 175 C 256 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 45 mOhm TO-247-4 Notch
Scheda dati
120A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 49 A 60 mOhms - 10 V, 21 V 5 V 61 nC - 55 C + 175 C 237 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 60 mOhm TO-247-4 Notch
Scheda dati
117A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 80 mOhms - 10 V, 21 V 5 V 45 nC - 55 C + 175 C 192 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch
Scheda dati
81A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 30 A 107 mOhms - 10 V, + 21 V 5 V 34 nC - 55 C + 175 C 161 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 700 V 15 mOhm TO-247-4 Notch
Scheda dati
310A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 5 V 215 nC - 55 C + 175 C 524 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 17 mOhm TO-247-4 Notch
Scheda dati
20A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 119 A 22 mOhms - 10 V, + 23 V 5 V 194 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch
Scheda dati
23A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 113 A 31 mOhms - 10 V, + 23 V 5 V 232 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 700 V 35 mOhm TO-247-4 Notch
Scheda dati
79A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 75 A 44 mOhms - 10 V, + 23 V 5 V 93 nC - 55 C + 175 C 304 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch
Scheda dati
58A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 71 A 50 mOhms - 10 V, + 23 V 5 V 137 nC - 55 C + 175 C 371 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 700 V 15 mOhm TO-268
Scheda dati
91A magazzino
Min: 1
Mult.: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 1.9 V 215 nC - 55 C + 175 C 477 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 25 mOhm TO-247
Scheda dati
142A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 113 A 31 mOhms - 10 V, + 23 V 1.9 V 232 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1700 V 35 mOhm TO-247
Scheda dati
90A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 68 A 45 mOhms - 10 V, + 23 V 1.8 V 178 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 80 mOhm TO-247
Scheda dati
238A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 37 A 100 mOhms - 10 V, + 23 V 1.8 V 64 nC - 55 C + 175 C 200 W Enhancement
Microchip Technology MOSFET SiC MOSFET SIC 1700 V 750 mOhm TO-247-4
Scheda dati
312A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1.7 kV 750 mOhms
Microchip Technology MOSFET SiC MOSFET SIC 1200 V 17 mOhm TO-247-4
Scheda dati
42A magazzino
Min: 1
Mult.: 1

Screw Mount TO-247-4 N-Channel 1 Channel 1.2 kV 113 A 17.6 mOhms - 10 V, + 23 V 2.7 V - 55 C + 175 C 455 W
Microchip Technology MOSFET SiC MOSFET SIC 1700 V 35 mOhm TO-247-4
Scheda dati
318A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 68 A 35 mOhms - 10 V, + 23 V 3.25 V 178 nC - 55 C + 175 C 370 W Enhancement