Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Configurazione
If - Corrente diretta
Vrrm - Tensione inversa ripetitiva
Vf - Tensione diretta
Ifsm - Sovracorrente diretta
Ir - Corrente inversa
Temperatura di lavoro minima
Temperatura di lavoro massima
Serie
Confezione
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 30 A TO-247
Scheda dati
45A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual 65 A 1.2 kV 1.5 V 165 A 200 uA - 55 C + 175 C Tube
Microchip Technology Diodi Schottky SiC UNRLS, FG, GEN2 SIC SBD
Scheda dati
158A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 15 A 1.2 kV 1.5 V 109 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC 1200 V, 30 A SiC SBD
Scheda dati
835A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 69 A 1.2 kV 1.5 V 280 A 9 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 30 A TO-220
Scheda dati
862A magazzino
Min: 1
Mult.: 1

Through Hole TO-220FP-2 Single 30 A 1.2 kV 1.5 V 165 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC 1200 V, 10 A SiC SBD
Scheda dati
132A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 10 A 1.2 kV 1.5 V 90 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC 1200 V, 10 A SiC SBD
Scheda dati
225A magazzino
Min: 1
Mult.: 1

Through Hole TO-220-2 Single 27 A 1.2 kV 1.5 V 75 A 3 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC UNRLS, FG, GEN2 SIC SBD
Scheda dati
43A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 10 A 1.7 kV 1.5 V 90 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC SIC SBD 700 V 30 A TO-247
Scheda dati
225A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 30 A 700 V 1.5 V 146 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC 700V, 30A SiC SBD
Scheda dati
164A magazzino
Min: 1
Mult.: 1

SMD/SMT D3PAK Single 60 A 700 V 1.5 V 146 A 200 uA - 55 C + 175 C Tube
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 30 A TO-268
Scheda dati
45A magazzino
Min: 1
Mult.: 1

SMD/SMT D3PAK Single 30 A 1.2 kV 1.5 V 165 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC 700 V, 50 A SiC SBD
Scheda dati
145A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 50 A 700 V 1.5 V 124 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 50 A TO-247
Scheda dati
52A magazzino
12013/04/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 50 A 1.2 kV 1.5 V 290 A 200 uA - 55 C + 175 C MSC0 Tube

Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 50 A TO-247
Scheda dati
10A magazzino
3006/04/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-3 Dual 109 A 1.2 kV 1.5 V 290 A - 55 C + 175 C Tube
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 50 A TO-268
Scheda dati
65A magazzino
Min: 1
Mult.: 1

SMD/SMT D3PAK Single 50 A 1.2 kV 1.5 V 290 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC UNRLS, FG, GEN2 SIC SBD
Scheda dati
23A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-2 Single 10 A 700 V 1.5 V 90 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC 700 V, 10 A SiC SBD
Scheda dati
325A magazzino
Min: 1
Mult.: 1

Through Hole TO-220-2 Single 10 A 700 V 1.5 V 90 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC 700V, 50A SiC SBD
Scheda dati
44A magazzino
Min: 1
Mult.: 1

SMD/SMT D3PAK Single 50 A 1.2 kV 1.5 V 290 A 200 uA - 55 C + 175 C Tube
Microchip Technology Diodi Schottky SiC 700 V, 20 A SiC SBD
Scheda dati
Tempo di consegna, se non a magazzino 7 settimane
Min: 1
Mult.: 1

Through Hole TO-220-2 Single 30 A 700 V 1.5 V 146 A 200 uA - 55 C + 175 C MSC0 Tube
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 15 A TO-220
Scheda dati
Tempo di consegna, se non a magazzino 8 settimane
Min: 150
Mult.: 150

Through Hole TO-220-2 Single 15 A 1.2 kV 1.5 V 109 A 10 uA - 55 C + 175 C Tube
Microchip Technology Diodi Schottky SiC SIC SBD 1200 V 20 A TO-220
Scheda dati
Tempo di consegna, se non a magazzino 7 settimane
Min: 100
Mult.: 100

Through Hole TO-220-2 Single 20 A 1.2 kV 1.5 V 115 A 6 uA - 55 C + 175 C Tube
Microchip Technology Diodi Schottky SiC SIC SBD 700 V 10 A TO-268
Scheda dati
Non disponibile a magazzino
Min: 1
Mult.: 1

SMD/SMT TO-268-3 Single 24 A 700 V 1.5 V 58 A - 55 C + 175 C Tube