Qorvo GaN Transistor Solutions for Sub 6GHz 5G
Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.
Related Products
Qorvo Transistor RF GaN QPD0005
Transistor monostadio senza pari in grado di erogare PSAT di 8,7 W con funzionamento 48 V.
Qorvo QPD GaN RF Transistors
Used in Doherty architecture for the final stage of a base station power amplifier.
Qorvo QPD1009 & QPD1010 GaN RF Transistors
Discrete GaN on SiC HEMTs which operate from DC to 4GHz constructed with the QGaN25HV process.
Qorvo QPD1013 GaN RF Transistor
High-power, wide-bandwidth HEMT which operates from DC to 2.7GHz.
Qorvo 5G Solutions
Support 5G deployment and growing mobile data with a broad range of RF connectivity solutions.
Evaluation Boards
Qorvo QPD1013 GaN RF Transistor Evaluation Board
Evaluates the QPD1013 GaN RF transistor.
Qorvo Scheda di valutazione QPD0005
Progettata per valutare i transistor RF SiC a stadio singolo non accoppiati QPD0005 GaN.
| Codice prodotto | Descrizione | Scheda dati |
|---|---|---|
| QPD0060 | GaN FETs DC-3.6GHz GaN 90W 48V |  |
| QPD1009 | GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN | |
| QPD0030 | GaN FETs DC-4GHz 45W GaN 48V | |
| QPD1009-EVB1 | Strumenti di sviluppo RF DC-4GHz 15W 28-50V Eval Board | |
| QPD0030EVB01 | Strumenti di sviluppo RF DC-4 GHz, 45W, 48V GaN RF Pwr Tr | |
| QPD1010-EVB1 | Strumenti di sviluppo RF DC-4GHz 10W 28-50V Eval Board | |
| QPD1013EVB01 | Strumenti di sviluppo RF DC-2.7GHz 150W Eval Board | |