STMicroelectronics Transistor

Risultati: 1.980
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STMicroelectronics MOSFET N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea 185A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3 N-Channel
STMicroelectronics MOSFET N-channel 620 V 8.4 A TO-220 TO-22 976A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep 970A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3 N-Channel


STMicroelectronics Moduli IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I 258A magazzino
Min: 1
Mult.: 1

IGBT Modules Si
STMicroelectronics MOSFET N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET 504A magazzino
Min: 1
Mult.: 1
Nastrati: 1.800

MOSFETs Si SMD/SMT TO-LL-8 N-Channel

STMicroelectronics MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in TO-247 package 382A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-247-3 N-Channel
STMicroelectronics MOSFET PTD HIGH VOLTAGE 1.992A magazzino
Min: 1
Mult.: 1

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel
STMicroelectronics MOSFET N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na 704A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH 914A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics Transistor bipolari - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model 145A magazzino
Min: 1
Mult.: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 NPN
STMicroelectronics Transistor bipolari - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model 21A magazzino
Min: 1
Mult.: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 PNP


STMicroelectronics IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a 566A magazzino
Min: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 154A magazzino
1.00001/03/2027 previsto
Min: 1
Mult.: 1
Nastrati: 1.000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 194A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 532A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 338A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 693A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 599A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 368A magazzino
1.20019/10/2026 previsto
Min: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics MOSFET Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET 194A magazzino
Min: 1
Mult.: 1
Nastrati: 200

MOSFETs Si SMD/SMT ACEPACK SMIT-9 N-Channel
STMicroelectronics MOSFET Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET 192A magazzino
Min: 1
Mult.: 1
Nastrati: 200

MOSFETs Si N-Channel
STMicroelectronics Moduli IGBT SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT 69A magazzino
Min: 1
Mult.: 1

IGBT Modules Si Through Hole SDIPHP-30
STMicroelectronics IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode 189A magazzino
Min: 1
Mult.: 1
Nastrati: 200

IGBT Transistors Si SMD/SMT ACEPACK-5
STMicroelectronics IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT 550A magazzino
Min: 1
Mult.: 1

IGBT Transistors Si Through Hole
STMicroelectronics MOSFET Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET 686A magazzino
1.00006/04/2026 previsto
Min: 1
Mult.: 1
Nastrati: 1.000

MOSFETs Si SMD/SMT H2PAK-2 N-Channel