|
|
MOSFET N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA75N60DM6
- STMicroelectronics
-
1:
8,82 €
-
185A magazzino
|
Codice Mouser
511-STWA75N60DM6
|
STMicroelectronics
|
MOSFET N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
185A magazzino
|
|
|
8,82 €
|
|
|
6,91 €
|
|
|
5,75 €
|
|
|
5,74 €
|
|
|
4,79 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
MOSFET N-channel 620 V 8.4 A TO-220 TO-22
- STF10N62K3
- STMicroelectronics
-
1:
2,33 €
-
976A magazzino
|
Codice Mouser
511-STF10N62K3
|
STMicroelectronics
|
MOSFET N-channel 620 V 8.4 A TO-220 TO-22
|
|
976A magazzino
|
|
|
2,33 €
|
|
|
1,50 €
|
|
|
1,01 €
|
|
|
0,845 €
|
|
|
0,732 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFET N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
- STFH13N60M2
- STMicroelectronics
-
1:
2,71 €
-
970A magazzino
-
Verifica lo stato in fabbrica
|
Codice Mouser
511-STFH13N60M2
Verifica lo stato in fabbrica
|
STMicroelectronics
|
MOSFET N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
|
|
970A magazzino
|
|
|
2,71 €
|
|
|
1,38 €
|
|
|
1,17 €
|
|
|
1,12 €
|
|
|
0,963 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Moduli IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
- STGIPQ5C60T-HLS
- STMicroelectronics
-
1:
7,58 €
-
258A magazzino
|
Codice Mouser
511-STGIPQ5C60T-HLS
|
STMicroelectronics
|
Moduli IGBT SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
|
|
258A magazzino
|
|
|
7,58 €
|
|
|
5,51 €
|
|
|
3,97 €
|
|
|
3,83 €
|
|
Min: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
|
|
|
|
|
|
MOSFET N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
- STO36N60M6
- STMicroelectronics
-
1:
5,19 €
-
504A magazzino
|
Codice Mouser
511-STO36N60M6
|
STMicroelectronics
|
MOSFET N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
|
|
504A magazzino
|
|
|
5,19 €
|
|
|
3,48 €
|
|
|
2,51 €
|
|
|
2,32 €
|
|
|
2,32 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
|
|
|
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in TO-247 package
- STW35N60DM2
- STMicroelectronics
-
1:
4,36 €
-
382A magazzino
|
Codice Mouser
511-STW35N60DM2
|
STMicroelectronics
|
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in TO-247 package
|
|
382A magazzino
|
|
|
4,36 €
|
|
|
2,92 €
|
|
|
2,39 €
|
|
|
2,04 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
MOSFET PTD HIGH VOLTAGE
- STB6N65K3
- STMicroelectronics
-
1:
1,75 €
-
1.992A magazzino
-
Verifica lo stato in fabbrica
|
Codice Mouser
511-STB6N65K3
Verifica lo stato in fabbrica
|
STMicroelectronics
|
MOSFET PTD HIGH VOLTAGE
|
|
1.992A magazzino
|
|
|
1,75 €
|
|
|
1,13 €
|
|
|
0,776 €
|
|
|
0,657 €
|
|
|
Visualizza
|
|
|
0,549 €
|
|
|
0,523 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na
- STFU15N80K5
- STMicroelectronics
-
1:
3,25 €
-
704A magazzino
|
Codice Mouser
511-STFU15N80K5
|
STMicroelectronics
|
MOSFET N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na
|
|
704A magazzino
|
|
|
3,25 €
|
|
|
2,13 €
|
|
|
1,91 €
|
|
|
1,70 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH
- STP9NK65Z
- STMicroelectronics
-
1:
3,35 €
-
914A magazzino
|
Codice Mouser
511-STP9NK65Z
|
STMicroelectronics
|
MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH
|
|
914A magazzino
|
|
|
3,35 €
|
|
|
2,19 €
|
|
|
1,62 €
|
|
|
1,44 €
|
|
|
1,27 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor bipolari - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
79,62 €
-
145A magazzino
|
Codice Mouser
511-2N2222AUB1
|
STMicroelectronics
|
Transistor bipolari - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
145A magazzino
|
|
|
79,62 €
|
|
|
74,78 €
|
|
|
67,42 €
|
|
Min: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Transistor bipolari - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
96,01 €
-
21A magazzino
|
Codice Mouser
511-2N2907AUB1
|
STMicroelectronics
|
Transistor bipolari - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21A magazzino
|
|
Min: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
5,66 €
-
566A magazzino
|
Codice Mouser
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
566A magazzino
|
|
|
5,66 €
|
|
|
3,92 €
|
|
|
2,84 €
|
|
|
2,82 €
|
|
|
2,70 €
|
|
Min: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
17,67 €
-
154A magazzino
-
1.00001/03/2027 previsto
|
Codice Mouser
511-SCT012H90G3AG
|
STMicroelectronics
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
154A magazzino
1.00001/03/2027 previsto
|
|
|
17,67 €
|
|
|
12,69 €
|
|
|
12,33 €
|
|
|
11,52 €
|
|
Min: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
13,31 €
-
194A magazzino
|
Codice Mouser
511-SCT018H65G3AG
|
STMicroelectronics
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
194A magazzino
|
|
|
13,31 €
|
|
|
9,40 €
|
|
|
9,05 €
|
|
|
8,57 €
|
|
|
8,00 €
|
|
Min: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
13,43 €
-
532A magazzino
|
Codice Mouser
511-SCT018W65G3-4AG
|
STMicroelectronics
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532A magazzino
|
|
|
13,43 €
|
|
|
10,58 €
|
|
|
8,70 €
|
|
|
8,49 €
|
|
|
8,08 €
|
|
Min: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
11,10 €
-
338A magazzino
|
Codice Mouser
511-SCT027W65G3-4AG
|
STMicroelectronics
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338A magazzino
|
|
|
11,10 €
|
|
|
8,30 €
|
|
|
7,17 €
|
|
|
6,35 €
|
|
Min: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
11,31 €
-
693A magazzino
|
Codice Mouser
511-SCT040W120G3-4AG
|
STMicroelectronics
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
693A magazzino
|
|
|
11,31 €
|
|
|
7,90 €
|
|
|
6,47 €
|
|
Min: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
11,22 €
-
599A magazzino
|
Codice Mouser
511-SCT040W120G3AG
|
STMicroelectronics
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
599A magazzino
|
|
|
11,22 €
|
|
|
7,84 €
|
|
|
6,41 €
|
|
Min: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
10,81 €
-
368A magazzino
-
1.20019/10/2026 previsto
|
Codice Mouser
511-SCT070W120G3-4AG
|
STMicroelectronics
|
MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
368A magazzino
1.20019/10/2026 previsto
|
|
|
10,81 €
|
|
|
8,04 €
|
|
|
6,87 €
|
|
|
6,15 €
|
|
Min: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
19,77 €
-
194A magazzino
|
Codice Mouser
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFET Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
194A magazzino
|
|
|
19,77 €
|
|
|
15,45 €
|
|
|
10,84 €
|
|
|
10,84 €
|
|
|
10,32 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
|
|
MOSFET Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
16,39 €
-
192A magazzino
|
Codice Mouser
511-SH68N65DM6AG
|
STMicroelectronics
|
MOSFET Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
192A magazzino
|
|
|
16,39 €
|
|
|
11,71 €
|
|
|
10,45 €
|
|
|
10,45 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
|
|
N-Channel
|
|
|
|
Moduli IGBT SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
- STGIK10M120T
- STMicroelectronics
-
1:
36,89 €
-
69A magazzino
|
Codice Mouser
511-STGIK10M120T
|
STMicroelectronics
|
Moduli IGBT SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
|
|
69A magazzino
|
|
Min: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIPHP-30
|
|
|
|
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
- STGSH80HB65DAG
- STMicroelectronics
-
1:
16,69 €
-
189A magazzino
|
Codice Mouser
511-STGSH80HB65DAG
|
STMicroelectronics
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
|
|
189A magazzino
|
|
|
16,69 €
|
|
|
11,94 €
|
|
|
10,69 €
|
|
|
10,69 €
|
|
Min: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
ACEPACK-5
|
|
|
|
|
IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
- STGYA50H120DF2
- STMicroelectronics
-
1:
5,46 €
-
550A magazzino
|
Codice Mouser
511-STGYA50H120DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
|
|
550A magazzino
|
|
|
5,46 €
|
|
|
3,83 €
|
|
|
3,35 €
|
|
|
3,29 €
|
|
Min: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
|
MOSFET Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
- STH12N120K5-2AG
- STMicroelectronics
-
1:
10,33 €
-
686A magazzino
-
1.00006/04/2026 previsto
|
Codice Mouser
511-STH12N120K5-2AG
|
STMicroelectronics
|
MOSFET Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
|
|
686A magazzino
1.00006/04/2026 previsto
|
|
|
10,33 €
|
|
|
8,37 €
|
|
|
6,97 €
|
|
|
6,34 €
|
|
|
5,81 €
|
|
Min: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|