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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Nome commerciale
Confezione
Infineon Technologies MOSFET LOW POWER_LEGACY
Scheda dati
40.949A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2 A 2.7 Ohms - 20 V, 20 V 2.1 V 12 nC - 55 C + 150 C 42 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3
Scheda dati
3.993A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 450 mOhms - 20 V, 20 V 2.1 V 64 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 6A TO220FP-3 CoolMOS C3
Scheda dati
2.289A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 780 mOhms - 20 V, 20 V 2.1 V 41 nC - 55 C + 150 C 39 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 850V 54.9A TO247-3
Scheda dati
129A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 54.9 A 77 mOhms - 20 V, 20 V 2.1 V 288 nC - 55 C + 150 C 500 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3
Scheda dati
873A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 560 mOhms - 20 V, 20 V 2.1 V 60 nC - 55 C + 150 C 104 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_LEGACY
Scheda dati
1.363A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4 A 1.1 Ohms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3
Scheda dati
569A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 560 mOhms - 20 V, 20 V 2.1 V 60 nC - 55 C + 150 C 40 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
Scheda dati
2.000A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 290 mOhms - 20 V, 20 V 2.1 V 88 nC - 55 C + 150 C 227 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 800V 17A D2PAK-2 CoolMOS C3
Scheda dati
1.482A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 250 mOhms - 20 V, 20 V 2.1 V 117 nC - 55 C + 150 C 227 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_LEGACY
Scheda dati
4.168A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6 A 900 mOhms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3
Scheda dati
529A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.1 Ohms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 63 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 8A TO220-3 CoolMOS C3
Scheda dati
132A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 650 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 104 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 8A TO220FP-3 CoolMOS C3
Scheda dati
414A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 8 A 560 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 40 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3
Scheda dati
42A magazzino
50002/04/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 11 A 450 mOhms - 20 V, 20 V 2.1 V 64 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3
Scheda dati
42A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 4 A 1.1 Ohms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 63 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 11A TO220-3 CoolMOS C3
Scheda dati
23A magazzino
2.50023/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 390 mOhms - 20 V, 20 V 2.1 V 85 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3
Scheda dati
60A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 11 A 390 mOhms - 20 V, 20 V 2.1 V 85 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 800V 11A TO247-3 CoolMOS C3
Scheda dati
31A magazzino
24028/01/2027 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 11 A 390 mOhms - 20 V, 20 V 2.1 V 85 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 800V 17A TO247-3 CoolMOS C3
Scheda dati
233A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 290 mOhms - 20 V, 20 V 2.1 V 88 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 800V 17A TO247-3 CoolMOS C3
Scheda dati
276A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 20 V, 20 V 2.1 V 117 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
Scheda dati
70A magazzino
50030/04/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 900 mOhms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 83 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3
Scheda dati
348A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 290 mOhms - 20 V, 20 V 2.1 V 88 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 17A TO220-3 CoolMOS C3
Scheda dati
508A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 290 mOhms - 20 V, 20 V 2.1 V 88 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 6A TO220-3 CoolMOS C3
Scheda dati
1A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 780 mOhms - 20 V, 20 V 2.1 V 41 nC - 55 C + 150 C 83 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 800V 11A TO220FP-3 CoolMOS C3
Scheda dati
38716/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 11 A 390 mOhms - 20 V, 20 V 2.1 V 85 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube