Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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Risultati: 51
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS
ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 106A magazzino
Min: 1
Mult.: 1

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 86A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 389A magazzino
Min: 1
Mult.: 1

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 2.449A magazzino
Min: 1
Mult.: 1
: 2.500

ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM 539A magazzino
Min: 1
Mult.: 1


ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,44 Pin TSOP II, RoHS 1.611A magazzino
Min: 1
Mult.: 1
: 1.000

ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v 1.95v,54 Ball BGA (6x8 mm), RoHS 480A magazzino
Min: 1
Mult.: 1

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp 250A magazzino
Min: 1
Mult.: 1

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V 1.95V, VDDQ 1.7V 1.95V,48 Ball BGA (6x8 mm), RoHS 310A magazzino
Min: 1
Mult.: 1

ISSI IS66WVE2M16ECLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns 215A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 942A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1.887A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 1.080A magazzino
Min: 1
Mult.: 1

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 158A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 306A magazzino
48006/07/2026 previsto
Min: 1
Mult.: 1

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 136A magazzino
Min: 1
Mult.: 1

ISSI DRAM 64Mb, SerialRAM, SPI and QPI Protocol, 3V, 104MHz, SOIC-8 171A magazzino
50006/07/2026 previsto
Min: 1
Mult.: 1

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V 3.6V, VDDQ 2.7V 3.6V,48 Ball BGA (6x8 mm), RoHS 4.055A magazzino
Min: 1
Mult.: 1
: 2.500


ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,44 Pin TSOP II, RoHS 758A magazzino
Min: 1
Mult.: 1

ISSI SRAM Pseudo SRAM 64Mb 1.834A magazzino
Min: 1
Mult.: 1

ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns 1.115A magazzino
Min: 1
Mult.: 1

ISSI IS66WVE4M16ECLL-70BLI
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns 551A magazzino
Min: 1
Mult.: 1

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v 3.6v,48 Ball BGA (6x8mm), RoHS 106A magazzino
Min: 1
Mult.: 1