Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 419A magazzino
Min: 1
Mult.: 1
Max.: 7

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Scheda dati
88A magazzino
Min: 1
Mult.: 1
Max.: 1

ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM
Scheda dati
539A magazzino
Min: 1
Mult.: 1
Max.: 5

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Scheda dati
960A magazzino
Min: 1
Mult.: 1
Max.: 1

ISSI SRAM Pseudo SRAM 64Mb
Scheda dati
2.170A magazzino
Min: 1
Mult.: 1
Max.: 127


ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS
Scheda dati
1.611A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Max.: 2
Nastrati: 1.000

ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp
Scheda dati
285A magazzino
Min: 1
Mult.: 1
Max.: 12

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS
Scheda dati
310A magazzino
Min: 1
Mult.: 1
Max.: 200

ISSI IS66WVE4M16EALL-70BLI
ISSI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns
Scheda dati
867A magazzino
Min: 1
Mult.: 1
Max.: 6

ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns
Scheda dati
1.733A magazzino
Min: 1
Mult.: 1
Max.: 28

ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS
Scheda dati
480A magazzino
Min: 1
Mult.: 1
Max.: 200

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Scheda dati
308A magazzino
Min: 1
Mult.: 1
Max.: 16

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Scheda dati
885A magazzino
Min: 1
Mult.: 1
Max.: 37

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS
Scheda dati
656A magazzino
Min: 1
Mult.: 1
Max.: 121

ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Scheda dati
1.887A magazzino
Min: 1
Mult.: 1
Max.: 200

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Scheda dati
827A magazzino
Min: 1
Mult.: 1
Max.: 353

ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
Scheda dati
174A magazzino
Min: 1
Mult.: 1
Max.: 13

ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS
Scheda dati
467A magazzino
Min: 1
Mult.: 1
Max.: 32

ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450A magazzino
Min: 1
Mult.: 1
Max.: 200

ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Scheda dati
148A magazzino
Min: 1
Mult.: 1
Max.: 24

ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS
Scheda dati
159A magazzino
Min: 1
Mult.: 1
Max.: 15

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Scheda dati
4.821A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Max.: 491
Nastrati: 2.500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Scheda dati
1.601A magazzino
Min: 1
Mult.: 1
Max.: 719

ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Scheda dati
4.324A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Max.: 1.465
Nastrati: 2.500

ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS
Scheda dati
3.104A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Max.: 38
Nastrati: 2.500