Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

Tipi di Circuiti integrati di memoria

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Risultati: 51
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Tipo di prodotto Stile di montaggio Package/involucro Dimensioni memoria Tipo di interfaccia
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 4.005A magazzino
Min: 1
Mult.: 1
: 2.500

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 86A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT SOIC-8 32 Mbit
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 379A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI SRAM 16Mb,Pseudo SRAM,Asynch/Page, 1M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 480A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT TFBGA-48 16 Mbit Parallel

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 755A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT TSOP-44 8 Mbit Parallel
ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM 514A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT 16 Mbit Parallel
ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS 480A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT 32 Mbit Parallel
ISSI IS66WVE4M16ECLL-70BLI
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns 551A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT 64 Mbit Parallel
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS 310A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT 32 Mbit Parallel
ISSI IS66WVE2M16ECLL-70BLI
ISSI SRAM 32Mb,Pseudo SRAM 2M x 16 70ns 215A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT 32 Mbit Parallel
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 736A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 782A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1.775A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 890A magazzino
80002/09/2026 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT SOIC-8 64 Mbit
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 135A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT SOIC-8 32 Mbit
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 134A magazzino
Min: 1
Mult.: 1

DRAM SMD/SMT SOIC-8 64 Mbit
ISSI DRAM 64Mb, SerialRAM, SPI and QPI Protocol, 3V, 104MHz, SOIC-8 131A magazzino
10023/03/2027 previsto
Min: 1
Mult.: 1

DRAM SMD/SMT SOIC-8 64 Mbit

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 496A magazzino
Min: 1
Mult.: 1
: 1.000

SRAM SMD/SMT TSOP-44 8 Mbit Parallel
ISSI SRAM Pseudo SRAM 64Mb 1.669A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT VFBGA-54 64 Mbit
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 2.319A magazzino
Min: 1
Mult.: 1
: 2.500

SRAM SMD/SMT TFBGA-48 32 Mbit Parallel
ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns 1.945A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT 8 Mbit Parallel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 157A magazzino
2.88011/09/2026 previsto
Min: 1
Mult.: 1

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 202A magazzino
Min: 1
Mult.: 1

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel