Pseudo SRAM/CellularRAM

ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has an SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature that does not require a physical refresh. These CellularRAM devices are designed in accordance with the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.

Tipi di Circuiti integrati di memoria

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Risultati: 51
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Tipo di prodotto Stile di montaggio Package/involucro Dimensioni memoria Tipo di interfaccia
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 88A magazzino
Min: 1
Mult.: 1
Max.: 1

DRAM SMD/SMT SOIC-8 32 Mbit
ISSI DRAM 64Mb, QUADRAM, 2.7V-3.6V, 200MHz, 24-ball TFBGA, RoHS 419A magazzino
Min: 1
Mult.: 1
Max.: 7

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI SRAM 16Mb 70ns 2.5v-3.6v 1M x 16 Pseudo SRAM 539A magazzino
Min: 1
Mult.: 1
Max.: 5

SRAM SMD/SMT 16 Mbit Parallel
ISSI SRAM Pseudo SRAM 64Mb 2.170A magazzino
Min: 1
Mult.: 1
Max.: 127

SRAM SMD/SMT VFBGA-54 64 Mbit

ISSI SRAM 8Mb,Pseudo SRAM,Async,512K x 16,70ns,2.5v-3.6v,44 Pin TSOP II, RoHS 1.611A magazzino
Min: 1
Mult.: 1
Max.: 2
Nastrati: 1.000

SRAM SMD/SMT TSOP-44 8 Mbit Parallel
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns A-Temp 285A magazzino
Min: 1
Mult.: 1
Max.: 12

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI IS66WVC2M16ECLL-7010BLI
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v-1.95v,54 Ball BGA (6x8 mm), RoHS 480A magazzino
Min: 1
Mult.: 1
Max.: 200

SRAM SMD/SMT 32 Mbit Parallel
ISSI IS66WV51216EBLL-55TLI
ISSI SRAM 8Mb Pseudo SRAM Async 512Kx16 55ns 1.733A magazzino
Min: 1
Mult.: 1
Max.: 28

SRAM SMD/SMT 8 Mbit Parallel
ISSI IS66WVE4M16EALL-70BLI
ISSI SRAM 64Mb Pseudo SRAM Asynch/Pg 4Mx16 55ns 867A magazzino
Min: 1
Mult.: 1
Max.: 6

SRAM SMD/SMT 64 Mbit Parallel
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V-1.95V, VDDQ 1.7V-1.95V,48 Ball BGA (6x8 mm), RoHS 310A magazzino
Min: 1
Mult.: 1
Max.: 200

SRAM SMD/SMT 32 Mbit Parallel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 308A magazzino
Min: 1
Mult.: 1
Max.: 16

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 885A magazzino
Min: 1
Mult.: 1
Max.: 37

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 1.8V, 200MHz, 24-ball TFBGA, RoHS 656A magazzino
Min: 1
Mult.: 1
Max.: 121

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, OctalRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 1.887A magazzino
Min: 1
Mult.: 1
Max.: 200

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 817A magazzino
Min: 1
Mult.: 1
Max.: 353

DRAM SMD/SMT SOIC-8 64 Mbit
ISSI DRAM 32Mb, SerialRAM, Continuous Operation, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS 174A magazzino
Min: 1
Mult.: 1
Max.: 13

DRAM SMD/SMT SOIC-8 32 Mbit
ISSI DRAM 64Mb, HyperRAM, 8Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS 467A magazzino
Min: 1
Mult.: 1
Max.: 32

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 450A magazzino
Min: 1
Mult.: 1
Max.: 200

DRAM SMD/SMT TFBGA-24 64 Mbit
ISSI DRAM 64Mb, SerialRAM, Continuous Operation, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 148A magazzino
Min: 1
Mult.: 1
Max.: 24

DRAM SMD/SMT SOIC-8 64 Mbit
ISSI DRAM 32Mb, SerialRAM, 1.65V-1.95V, 104MHz, 8 pin SOIC 150 mil, RoHS 159A magazzino
Min: 1
Mult.: 1
Max.: 15

DRAM SMD/SMT SOIC-8 64 Mbit
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 4.821A magazzino
Min: 1
Mult.: 1
Max.: 491
Nastrati: 2.500

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 1.601A magazzino
Min: 1
Mult.: 1
Max.: 719

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 4.274A magazzino
Min: 1
Mult.: 1
Max.: 1.465
Nastrati: 2.500

SRAM SMD/SMT TFBGA-48 32 Mbit Parallel
ISSI SRAM 64Mb,Pseudo SRAM,Asynch/Page, 4M x 16,70ns,VDD 2.7V-3.6V, VDDQ 2.7V-3.6V,48 Ball BGA (6x8 mm), RoHS 3.104A magazzino
Min: 1
Mult.: 1
Max.: 38
Nastrati: 2.500

SRAM SMD/SMT TFBGA-48 64 Mbit Parallel
ISSI IS66WVE4M16ECLL-70BLI
ISSI SRAM 64Mb Pseudo SRAM 4Mx16 70ns 557A magazzino
Min: 1
Mult.: 1
Max.: 200

SRAM SMD/SMT 64 Mbit Parallel