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Vishay General Semiconductor VxxDL45BP Trench MOS Barrier Schottky Rectifiers

Vishay General Semiconductor VxxDL45BP Trench MOS Barrier Schottky Rectifiers for PV Solar Cell Bypass Protection provide low forward voltage drop and low power losses. Vishay VxxDL45BP series is ideal for automated placement due to its very low profile(typical height of 1.7mm). The VxxDL45BP Series meets MSL level 1, per J-STD-020, with a LF maximum peak of +260°C.

Features

  • Up to 40A forward current
  • Up to 580mV forward voltage
  • Up to 240A forward surge current
  • 5mA reverse current

Associated Rectifiers

Vishay General Semiconductor Barriera Schottky Trench MOS TMBS®

Offre ridotte iniezioni del vettore di minoranza nella regione della deviazione, riducendo in tal modo al minimo le cariche accumulate e migliorando le velocità di commutazione.

Learn MoreInformazioni su Vishay General Semiconductor Barriera Schottky Trench MOS TMBS® View ProductsCorrelato a Vishay General Semiconductor Barriera Schottky Trench MOS TMBS®
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Codice prodotto Scheda dati Descrizione
V20DL45BP-M3\I V20DL45BP-M3\I Scheda dati Diodi e raddrizzatori Schottky 20A, 45V,TRENCH SKY RECT.
V30DL45BP-M3\I V30DL45BP-M3\I Scheda dati Diodi e raddrizzatori Schottky 30A, 45V,TRENCH SKY RECT.
V40DL45BP-M3\I V40DL45BP-M3\I Scheda dati Diodi e raddrizzatori Schottky 40A, 45V,TRENCH SKY RECT.
Pubblicato: 2015-02-11 | Aggiornato: 2022-03-11