Vishay / Siliconix Si88xx 8V TrenchFET® Power MOSFETs
Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs feature the industry's first n- and p-channel power MOSFET in the industry's smallest 0.8 mm by 0.8 mm chip-scale package, in addition to the first n- and p-channel devices to offer on-resistance (RDS(on)) ratings down to 1.2 V in this package size. The Si88xx 8V TrenchFET® Power MOSFETs come in the MICRO FOOT® package that occupies up to 36 % less board space than the next smallest chip-scale devices, yet offer comparable − and even lower − on-resistance (RDS(on)).
These Vishay Siliconix Si88xx 8V TrenchFET® Power MOSFETs can be used for load switching in handheld devices, including smartphones, tablets, portable media players, and mobile computing devices. The Si88xx 8V TrenchFET® Power MOSFETs' ultra-thin 0.357mm profiles save valuable board space in these applications − enabling smaller, slimmer mobile products.
Features
- Halogen-free according to IEC 61249-2-21 definition
- TrenchFET® power MOSFET
- Ultra small 0.8 mm x 0.8 mm outline
- Low on-resistance
- Typical ESD protection 1500 V HBM
- Compliant to RoHS Directive 2002/95/EC
Applications
- Cell phones, smartphones, tablet PCs, portable media players
- Load switch for low voltage drop
- Load switch for power lines
- Load switch for low voltage gate drive
Related Product
Vishay / Siliconix MOSFET Gen IV TrenchFET®
Offrono una bassa resistenza in conduzione del settore fino a 1,35 mΩ a 4,5 V.
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| Codice prodotto | Vds - Tensione di rottura drain-source | Id - corrente di drain continua | Rds On - Drain-source sulla resistenza | Qg - Carica del gate | Pd - Dissipazione di potenza | Scheda dati |
|---|---|---|---|---|---|---|
| SI8823EDB-T2-E1 | 20 V | 2.7 A | 77 mOhms | 17 nC | 900 mW |  |
| SI8802DB-T2-E1 | 8 V | 3.5 A | 54 mOhms | 4.3 nC | 900 mW | |
Pubblicato: 2012-02-22
| Aggiornato: 2022-03-11