onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes
onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.
Features
- Ease of paralleling
- High surge current capacitance
- Maximum junction temperature of +175°C
- No reverse/forward recovery
- High switching frequency
- Low forward voltage (VF)
- Positive temperature coefficient
- AEC-Q101 qualified and PPAP capable
Applications
- Automotive HEV-EV DC-DC converters
- Automotive HEV-EV onboard chargers
- Industrial power
- PFC
- Solar
- UPS
- Welding
Specifications
- Surface mount or through-hole
- 4A to 50A forward current range
- 1.38V to 1.7V forward voltage range
- 21A to 882A forward surge current range
Videos
Associated Products
onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices
Provides superior switching performance and higher reliability.
onsemi FFSP SiC Schottky Diodes
Silicon Carbide devices in an industry standard TO-220-2L package.
onsemi FFSH SiC Schottky Diodes
Silicon Carbide devices in an industry standard TO-247 package.
onsemi Diodi EliteSiC D1
Soluzione versatile e ad alte prestazioni progettata per le moderne applicazioni elettroniche di alimentazione.
onsemi Diodi EliteSiC D2
Gamma di diodi ad alte prestazioni progettati per applicazioni che richiedono una tensione nominale di 650 V.
Learn More About EliteSiC
onsemi EliteSiC
Risponde alle esigenze di applicazioni esigenti come inverter solari e caricabatterie per veicoli elettrici.
Pubblicato: 2019-05-21
| Aggiornato: 2024-07-23