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NXP Semiconductors MRFE6VP61K25H RF Power LDMOS Transistor

NXP's MRFE6VP61K25H Wideband RF Power LDMOS Transistor is a high ruggedness device that is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace, and radio/land mobile applications. The MRFE6VP61K25H features an unmatched input and output design allowing wide frequency range utilization, between 1.8MHz and 600MHz. This device can be used in either a single-ended or in a push-pull configuration, is suitable for linear application with appropriate biasing, and has integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.

Features

  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Device can be used Single-Ended or in a Push-Pull Configuration
  • Qualified Up to a Maximum of 50VDD Operation
  • Characterized from 30V to 50V for Extended Power Range
  • Suitable for Linear Application with Appropriate Biasing
  • Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Characterized with Series Equivalent Large-Signal Impedance Parameters

Applications

  • High VSWR industrial, including laser and plasma exciters
  • Broadcast (analog and digital)
  • Aerospace
  • Radio/land mobile applications

Packages & Pin Designations

Mechanical Drawing - NXP Semiconductors MRFE6VP61K25H RF Power LDMOS Transistor
Pubblicato: 2012-08-13 | Aggiornato: 2026-01-07