ASFETs for Hotswap and Soft Start are designed to support always-on applications and equipment. The CCPAK ASFETs for Hotswap and Soft Start offer a reliable linear mode, enhanced SOA, and low RDS(on). The CCPAK ASFETs are designed for carefully controlled in-rush current to protect components on replacement boards inserted into a live system.
ASFETs for PoE, eFuse, and relay replacement have been notably developed to complement modern high-power PSE controllers. The devices utilize the same silicon technology as the more significant "ASFETs for hot swap." These smaller ASFETs supply enhanced SOA for low-power linear-mode applications in a range of compact DFN2020 (2mm x 2mm) and LFPAK33 (3.3mm x 3.3mm) packages.
ASFETs for Battery Systems and eFuse are built for multi-cell battery-powered equipment. Li-ion batteries have the advantage of high energy density. However, this can become problematic in a fault condition, with the potential for a massive uncontrolled energy discharge, resulting in overheating of loads and potential circuit fires. An extremely robust and thermally efficient MOSFET is required to handle any significant discharge in a controlled manner until the battery is safely isolated and the system is switched off. This is an ideal application for Nexperia's most demanding LFPAK-housed devices.
ASFETs for DC motor control, including 50V/55V ASFETs, are designed to fulfill the requirements of 36V motors, from cordless power tools to outdoor power equipment and even e-bikes and scooters. MOSFETs that have been optimized for high current, strong SOA, and rugged avalanche rating are required to drive these challenging applications safely and efficiently.
Features
- ASFET for Hotswap and Soft Start
- MOSFETs with a strong linear mode performance and enhanced Safe Operating Area (SOA) are required to manage in-rush current effectively and reliably when capacitive loads are introduced to the backplane
- Once a replacement board is safely powered up, the MOSFET is turned fully ON
- ASFETs for Battery Systems and eFuse
- Under a fault situation, the Battery Isolation MOSFET normally goes into linear mode due to voltages being developed across circuit inductance at high current when the fault causes a deep discharge
- Strong SOA MOSFETs continue to operate safely and controllably until switched off, and the battery is fully isolated from the load circuit
- A low RDS(on) is required for low conduction losses in normal operation, but parameters need to be optimized for safe battery isolation
- Robust Battery Isolation MOSFETs can be used as the primary protection for equipment approval
- A low Vt may be required as battery protection IC may only have a 2V to 3V gate drive
- ASFETs for Power over Ethernet
- MOSFET’s primary role is to safely manage inrush current when capacitive loads are added to the network
- Extended enhanced Safe Operating Area (SOA) to withstand power dissipation due to short-circuit fault conditions until the PSE controller detects the fault and switches off
- Enhanced protection that offers more than 2x the protection of competitive devices. During a cable short fault, the ASFETs for PoE can safely dissipate up to 30W under +60°C ambient for up to 20ms
- Able to squeeze more high-power PoE ports into a compact router/switch requires superior power density offered by the thermal efficiency and compact footprint of the LFPAK33 package
- ASFETs for DC Motor Control
- 50V/55V for 36V DC motors, optimized SOA, high ID rating, and excellent avalanche capability
- High ID for motor overload, conditions highest current capability up to 500A
- Half-bridge for space-constrained motor applications, 60% lower parasitic inductance, and improved thermal performance
- Repetitive avalanche for space-constrained DC motors guaranteed repetitive avalanche performance
Applications
- Power over Ethernet (PoE)
- Battery systems and eFuse
- DC motor control
- Hotswap and soft start
Application Notes
- Interactive - MOSFETs in power switching applications (IAN50020)
- Interactive - Power MOSFETs in linear mode (IAN50006)
- Interactive - Paralleling power MOSFETs in high power applications (IAN50005)
- Using Power MOSFET Zth Curves (AN11156)
- Failure signature of Electrical Overstress on Power MOSFETs (AN11243)
- RC Thermal Models (AN11261)
- Paralleling power MOSFETs in high power applications (AN50005)
- Designing in MOSFETs for safe and reliable gate-drive operation (AN90001)
- LFPAK MOSFET thermal design guide (AN90003)
- Understanding power MOSFET data sheet parameters (AN11158)
- Using RC thermal models (AN11261)
- Power MOSFET single-shot and repetitive avalanche ruggedness rating (AN10273)
- Designing RC Snubbers (AN11160)
- Using power MOSFETs in parallel (AN11599)
- Power MOSFETs in linear mode (AN50006)
- Designing in MOSFETs for safeand reliable gate-drive operation (AN90001)
- Half-bridge MOSFET switching and its impact on EMC (AN90011)
- Maximum continuous currents in NEXPERIA LFPAK power MOSFETs (AN90016)
- LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout
Blogs
- Extending hotswap performance with LFPAK88 blog
- How copper clip makes the perfect packages for the future of power blog
- Protecting smart thermostats with compact enhanced SOA MOSFETs blog
- Optimizing MOSFETs to fit specific applications blog
- Innovating to meet changing standards - UL 2595 blog
- Qrr: overlooked and underappreciated in efficiency battle blog
- instagrid: a revolution in portable power blog
- Shrinking hotswap footprint with enhanced SOA blog
- Ratification of IEEE802.3bt powers new PSE/PD PoE opportunities blog
- Efficient isolation for 36V batteries blog
Press releases
- Nexperia broadens its range of discrete FET solutions at APEC 2024
- Nexperia launches new hotswap Application Specific MOSFETs (ASFETs) with double the improvement in SOA
- Nexperia MOSFETs deliver Best-In-Class Safe Operating Area and improved RDS(on) for Hot Swap designs
- Nexperia extends market-leading low RDS(on) MOSFET performance with the release of its 0.57 mΩ product in LFPAK56
- Nexperia announces lowest RDS(on) MOSFETs in LFPAK56 and LFPAK33 without compromising other vital parameters
- Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%

