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EPC EPC2361 eGaN® FET

EPC EPC2361 Enhancement-Mode Gallium Nitride Field-Effect Transistor (eGaN® FET) is a 100V power transistor engineered for efficient power conversion. The device offers a typical 0.75mΩ on-resistance, high-current capability, ultra-low gate charge, and zero reverse-recovery charge. These characteristics support high switching frequencies and reduced power losses in demanding applications.

The EPC EPC2361 is well suited for AC-DC synchronous rectification, high-frequency DC-DC converters, motor drives, solar Maximum Power Point Tracking (MPPT) systems, and high-power-density power modules. Enhancement-mode operation requires a typical 5V gate drive and no negative gate voltage. The compact 3mm × 5mm footprint, excellent thermal performance, and high efficiency help designers maximize power density while minimizing system size.

Features

  • Ultra-high efficiency
  • No reverse recovery
  • Lateral device structure
  • Ultra-low QG
  • Excellent thermal resistance
  • Small 3mm x 5mm package size
  • Lead-free, Halogen-free, and RoHS-compliant

Applications

  • High-power PSU AC-DC synchronous rectification
  • High-frequency DC-DC conversion input (buck, boost, buck-boost, and LLC)
  • Motor drives
  • High-power-density DC-DC modules
  • Synchronous rectification
  • Solar MPPT

Specifications

  • Maximum ratings
    • Drain-to-source voltage
      • 100V continuous
      • 120V repetitive transient
    • Drain-source current
      • 133A continuous (TJ <+125°C)
      • 697A pulsed at +25°C, TPULSE = 10µs
      • 558A pulsed at +125°C, TPULSE = 10µs
    • -4V to 6V gate-to-source voltage rnage
    • -40°C to +150°C operating temperature range
  • Static characteristics
    • 100V minimum drain-to-source voltage
    • 0.15mA maximum drain-source leakage, 0.01mA typical
    • 4mA to 9mA maximum gate-to-source forward leakage range, 0.05mA to 0.15mA typical range
    • 0.2mA maximum gate-to-source reverse leakage, 0.002mA typical
    • 0.8V to 2.5V gate threshold voltage range, 1.1V typical
    • 1mΩ maximum drain-source on resistance, 0.75mΩ typical
    • 1.6V typical source-to-drain forward voltage
  • Typical thermal resistance
    • 0.2°C/W junction-to-case (case TOP)
    • 1.5°C/W junction-to-board (case BOTTOM)
    • 44°C/W junction-to-ambient (using JEDEC 51-2 PCB)
    • 25°C/W junction-to-ambient (using EPC90156 EVB)
  • Dynamic characteristics
    • 4373pF maximum input capacitance, 3599pF typical
    • 13pF typical reverse transfer capacitance
    • 1284pF maximum output capacitance, 1019pF typical
    • Effective output capacitance
      • 1419pF typical energy-related
      • 1796pF time related
    • 0.4Ω typical gate resistance
    • 34nC maximum total gate charge, 28nC typical
    • 8.5nC typical gate-to-source charge
    • 3.8nC typical gate-to-drain charge
    • 6nC typical gate charge at threshold
    • 112nC maximum output charge, 90nC typical
    • 0nC typical source-drain recovery charge

Dimensions

Mechanical Drawing - EPC EPC2361 eGaN® FET
Published: 2026-10-20 | Updated: 2026-10-21