SRAM

Risultati: 11.640
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Dimensioni memoria Organizzazione Tempo di accesso Frequenza di clock massima Tipo di interfaccia Tensione di alimentazione - Max. Tensione di alimentazione - Min. Corrente di alimentazione - Max Temperatura di lavoro minima Temperatura di lavoro massima Stile di montaggio Package/involucro Qualifica Confezione
Renesas Electronics SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
401In ordine
Min: 1
Mult.: 1

4 Mbit 256 k x 16 12 ns Parallel 3.6 V 3 V 170 mA - 40 C + 85 C SMD/SMT TSOP-44 Tray
Renesas Electronics SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM
1.37702/11/2026 previsto
Min: 1
Mult.: 1
: 1.500

4 Mbit 256 k x 16 15 ns Parallel 3.6 V 3 V 170 mA - 40 C + 85 C SMD/SMT TSOP-44 Reel, Cut Tape, MouseReel
Renesas Electronics SRAM 9M 3.3V PBSRAM SLOW F/T
19613/11/2026 previsto
Min: 1
Mult.: 1

9 Mbit 256 k x 36 7.5 ns 117 MHz Parallel 3.465 V 3.135 V 285 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 36 144M
1004/08/2026 previsto
Min: 1
Mult.: 1
No
144 Mbit 4 M x 36 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 415 mA, 535 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 18 18M 18A magazzino
Min: 1
Mult.: 1

18 Mbit 1 M x 18 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 190 mA, 200 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
3628/08/2026 previsto
Min: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 18 18M
3612/08/2026 previsto
Min: 1
Mult.: 1

18 Mbit 1 M x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 210 mA, 230 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M
1804/08/2026 previsto
Min: 1
Mult.: 1

36 Mbit 1 M x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 210 mA, 220 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M
1428/08/2026 previsto
Min: 1
Mult.: 1
36 Mbit 2 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 205 mA, 240 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 36 9M
4228/08/2026 previsto
Min: 1
Mult.: 1

9 Mbit 256 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 160 mA, 190 mA - 40 C + 85 C SMD/SMT BGA-119 Tray

ISSI SRAM 4Mb,High-Speed/Low Power,Async,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS
5.400In ordine
Min: 1
Mult.: 1

4 Mbit 256 k x 16 10 ns Parallel 3.6 V 2.4 V 25 mA - 40 C + 85 C SMD/SMT TSOP-44
ISSI SRAM 32Mb, SerialRAM, 2.7V-3.6V, 104MHz, 8 pin SOIC 150 mil, RoHS
14.158In ordine
Min: 1
Mult.: 1
: 3.000

32 Mbit 4 M x 8 7 ns 104 MHz SPI 3.6 V 2.7 V 15 mA - 40 C + 85 C SMD/SMT SOIC-8 Reel, Cut Tape, MouseReel
ISSI IS66WVQ8M4DALL-200BLI
ISSI SRAM 32Mb, QUADRAM, 1.65V-1.95V, 200MHz, 24-ball TFBGA, RoHS 429A magazzino
Min: 1
Mult.: 1

32 Mbit 8 M x 4 5 ns 200 MHz SPI 1.95 V 1.7 V 20 mA - 40 C + 85 C SMD/SMT TFBGA-24
Renesas Electronics SRAM 32K X 36 SYNCH DPRAM
4111/09/2026 previsto
Min: 1
Mult.: 1
No
1 Mbit 32 k x 36 6 ns 133 MHz 3.45 V 3.15 V 360 mA - 40 C + 85 C SMD/SMT BGA-256 Tray
Renesas Electronics SRAM 64K X 36 3.3V SYNC DP RAM
4021/12/2026 previsto
Min: 1
Mult.: 1
No
2 Mbit 64 k x 36 25 ns 133 MHz Parallel 3.45 V 3.15 V 480 mA - 40 C + 85 C SMD/SMT CABGA-256 Tray
Infineon Technologies CY7C1461KV33-133AXI
Infineon Technologies SRAM No Bus Latency(NoBL) Burst SRAM
7217/09/2026 previsto
Min: 1
Mult.: 1

36 Mbit 1 M x 36 6.5 ns 133 MHz - 40 C + 85 C Tray
Infineon Technologies CY7C4142KV13-933FCXI
Infineon Technologies SRAM SYNC
3924/12/2026 previsto
Min: 1
Mult.: 1

85 ps 4 A Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
3618/01/2027 previsto
Min: 1
Mult.: 1

18 Mbit 512 k x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 230 mA, 250 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M
3604/08/2026 previsto
Min: 1
Mult.: 1

18 Mbit 512 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 230 mA - 40 C + 85 C SMD/SMT BGA-165 Tray

Microchip Technology SRAM 256K 32K X 8 1.7V SERIAL SRAM IND
84In ordine
Min: 1
Mult.: 1

256 kbit 32 k x 8 32 ns 20 MHz SPI 1.95 V 1.7 V 10 mA - 40 C + 85 C SMD/SMT TSSOP-8 Tube
Renesas Electronics SRAM 64Kx16 ASYNCHRONOUS 5.0V STATIC RAM
26928/12/2026 previsto
Min: 1
Mult.: 1

1 Mbit 64 k x 16 12 ns Parallel 5.5 V 4.5 V 180 mA 0 C + 70 C SMD/SMT TSOP-44 Tray
Renesas Electronics SRAM 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM
12703/08/2026 previsto
Min: 1
Mult.: 1

1 Mbit 64 k x 16 12 ns Parallel 3.6 V 3 V 150 mA 0 C + 70 C SMD/SMT TSOP-44 Tray
Renesas Electronics SRAM 9M ZBT SLOW X36 P/L 3.3V
4111/09/2026 previsto
Min: 1
Mult.: 1

9 Mbit 256 k x 36 10 ns 100 MHz Parallel 3.465 V 3.135 V 250 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M
1804/08/2026 previsto
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 190 mA, 200 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM
328/08/2026 previsto
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V - 40 C + 125 C SMD/SMT BGA-165