High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

Risultati: 68
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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica
Nome commerciale
onsemi MOSFET SiC 650V/40MOSICFETG3TO247-4
Scheda dati
3.278A magazzino
17,03 €
10,04 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1700V/400MOSICFETG3TO263-7
Scheda dati
26A magazzino
2.40015/01/2027 previsto
Nastro continuo
10,02 €
7,08 €
5,25 €
5,08 €
Nastrati
4,90 €
MouseReel disponibile
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO220
Scheda dati
339A magazzino
1.00013/11/2026 previsto
22,87 €
18,31 €
15,84 €
13,99 €
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/18MOSICFETG4TO263-7
Scheda dati
112A magazzino
80011/11/2027 previsto
Nastro continuo
21,04 €
15,71 €
13,59 €
12,01 €
Nastrati
12,01 €
MouseReel disponibile
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO247-3
Scheda dati
202A magazzino
25,27 €
18,86 €
18,79 €
16,62 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO247-3
Scheda dati
458A magazzino
23,23 €
14,08 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/60MOSICFETG4TO247
Scheda dati
1.240A magazzino
12,19 €
7,94 €
6,91 €
6,20 €
5,74 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/11MOSICFETG4TO263-7
Scheda dati
279A magazzino
Nastro continuo
25,44 €
20,15 €
18,53 €
16,75 €
Nastrati
16,75 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7L 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO26
Scheda dati
618A magazzino
Nastro continuo
16,54 €
10,37 €
9,68 €
Nastrati
9,68 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247-3
Scheda dati
674A magazzino
10,40 €
5,72 €
5,71 €
5,31 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/18MOSICFETG4TO247
Scheda dati
606A magazzino
12,01 €
6,90 €
6,74 €
6,17 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/60MOSICFETG4TO247-4
Scheda dati
562A magazzino
11,33 €
6,30 €
5,93 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO220-3
Scheda dati
976A magazzino
17,33 €
10,51 €
9,89 €
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/80MOSICFETG3TO24
Scheda dati
1.142A magazzino
18,20 €
10,94 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247
Scheda dati
626A magazzino
10,78 €
6,06 €
5,62 €
5,31 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/60MOSICFETG4TO263
Scheda dati
1.266A magazzino
Nastro continuo
6,77 €
3,72 €
3,62 €
3,49 €
Nastrati
3,49 €
3,02 €
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/150MOSICFETG3TO2
Scheda dati
343A magazzino
Nastro continuo
10,98 €
6,30 €
5,81 €
5,50 €
Nastrati
5,50 €
MouseReel disponibile
Min: 1
Mult.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi MOSFET SiC 1200V/40MOSICFETG3TO24
Scheda dati
382A magazzino
31,53 €
23,44 €
21,93 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO220
Scheda dati
469A magazzino
10,31 €
5,94 €
5,50 €
5,05 €
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/30MOSICFETG3TO220-3
Scheda dati
892A magazzino
22,07 €
13,99 €
Min: 1
Mult.: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO247
Scheda dati
1.166A magazzino
16,78 €
9,86 €
Min: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/9MOSICFETG3TO247-4
Scheda dati
358A magazzino
60,56 €
47,79 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 120 A 11 mOhms - 20 V, + 20 V 4 V 234 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/7MOSICFETG3TO247-4
Scheda dati
445A magazzino
67,00 €
56,52 €
Offerta
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 120 A 9 mOhms - 12 V, + 12 V 6 V 214 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 1200V/16MOSICFETG3TO247-4
Scheda dati
466A magazzino
60,76 €
49,25 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 107 A 21 mOhms - 20 V, + 20 V 4 V 218 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 650V/80MOSICFETG3TO247-4
Scheda dati
583A magazzino
11,09 €
6,23 €
5,78 €
5,48 €
Min: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET