Risultati: 119
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione
Infineon Technologies MOSFET CONSUMER 68.703A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 600 mOhms 16 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 4.901A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 13 A 310 mOhms 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER_NEW 3.457A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 4.860A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms 30 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 9.148A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2.5 A 2 Ohms 20 V 2.5 V 7.5 nC - 55 C + 150 C 22 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 4.458A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 51 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 8.670A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4.5 A 1 Ohms 20 V 2.5 V 11 nC - 55 C + 150 C 37 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 1.266A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 4.532A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 10 A 310 mOhms 20 V 3 V 13 nC - 40 C + 150 C 46 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_NEW 2.475A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6 A 490 mOhms 20 V 3 V 9 nC - 55 C + 150 C 30 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET CONSUMER 1.659A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 30 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 220A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 61 A 45 mOhms 20 V 3.5 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 2.042A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 950 V 4 A 2 Ohms 20 V 2.5 V 10 nC - 55 C + 150 C 7 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 1.451A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 11 A 450 mOhms 30 V 3 V 24 nC - 55 C + 150 C 29 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 1.441A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 900 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 2.153A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 950 V 2 A 3.7 Ohms 20 V 2.5 V 6 nC - 55 C + 150 C 22 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_NEW 2.815A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 4.5 A 1 Ohms 30 V 3 V 11 nC - 55 C + 150 C 6.8 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET 800V CoolMOS P7PowerTransistor 5.050A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 800 V 1.9 A 2.8 Ohms 30 V 3.5 V 5.8 nC - 55 C + 150 C 6.1 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_NEW 4.722A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 120 V 61 A 45 mOhms 20 V 1.7 V 90 nC - 55 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_NEW 12.682A magazzino
Min: 1
Mult.: 1
Max.: 4.000

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 76 A 30 mOhms 20 V 3 V 121 nC - 55 C + 150 C 255 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_NEW 21.007A magazzino
23.76029/04/2027 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 145 mOhms 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_NEW 7.565A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 145 mOhms 20 V 3 V 25 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_NEW 4.443A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 12 A 214 mOhms 20 V 3 V 18 nC - 55 C + 150 C 53 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 32.809A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 700 V 4 A 1.15 Ohms 16 V 2.5 V 4.7 nC - 40 C + 150 C 22.7 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET CONSUMER 4.778A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-223-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms 16 V 2.5 V 10.5 nC - 40 C + 150 C 6.9 W Enhancement CoolMOS Reel, Cut Tape, MouseReel