SSM3 High Current MOSFETs

Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Toshiba SSM3 High Current MOSFETs are ideal for mobile devices (wearable devices, smartphones, tablet PCs, etc.), load switches, DC-DC converters, and general-purpose switches. 

Risultati: 36
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
Toshiba MOSFET Small-signal MOSFET ID -3.5A, -60V VDSS
190.919A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 60 V 3.5 A 164 mOhms - 20 V, 10 V 800 mV 15.1 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET 236.647A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 40 V 2 A 185 mOhms 8 V 850 mV + 150 C 1 W Enhancement U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=.25A VDSS=20V 61.685A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SSM-3 N-Channel 1 Channel 20 V 250 mA 1.1 Ohms 10 V 1 V 340 pC - 55 C + 150 C 500 mW Enhancement U-MOSIII Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal Nch MOSFET ID: 0.15A 182.105A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-416-3 N-Channel 1 Channel 60 V 170 mA 2.8 Ohms 20 V 1.1 V 350 pC - 55 C + 150 C 500 mW Enhancement U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=--0.4A VDSS=-60V
31.045A magazzino
36.00025/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-346-3 P-Channel 1 Channel 60 V 400 mA 1.3 Ohms - 20 V, 10 V 2 V 3 nC - 55 C + 150 C 1.2 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=-6A VDSS=-20V 97.526A magazzino
60.00018/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 6 A 23 mOhms 10 V 1 V 16.6 nC - 55 C + 150 C 2 W Enhancement U-MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=-6A VDSS=-20V 127.697A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 6 A 17.5 mOhms 10 V 1 V 38.5 nC - 55 C + 150 C 2 W Enhancement U-MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-Signal MOSFET 155.045A magazzino
Min: 1
Mult.: 1
: 10.000

Si SMD/SMT CST3-3 P-Channel 1 Channel 20 V 250 mA 20 Ohms 10 V 1 V - 55 C + 150 C 100 mW Enhancement U-MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID 0.4A, VDSS 30V 53.911A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-323 N-Channel 1 Channel 30 V 400 mA 700 mOhms 20 V 1.1 V + 150 C 150 mW Enhancement MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=4A VDSS=20V 37.367A magazzino
12.00021/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 20 V 4 A 25 mOhms 8 V 400 mV 3.6 nC - 55 C + 150 C 2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V 112.221A magazzino
Min: 1
Mult.: 1
: 10.000

Si SMD/SMT CST3-3 N-Channel 1 Channel 20 V 1.4 A 840 mOhms 8 V 400 mV 1 nC - 55 C + 150 C 500 mW Enhancement U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal Nch MOSFET 269.171A magazzino
20.00028/09/2026 previsto
Min: 1
Mult.: 1
: 10.000

Si SMD/SMT CST3-3 N-Channel 1 Channel 60 V 400 mA 1.05 Ohms 20 V 1.1 V 600 pC - 55 C + 150 C 500 mW Enhancement U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET SMOS Low RON Vds:-60 V Vgss:+10/-20V Id:
7.008A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT S-Mini-3 P-Channel 1 Channel 60 V 400 mA 2 Ohms - 20 V, 10 V 2 V 3 nC + 150 C 1.2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V 11.449A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-416-3 P-Channel 1 Channel 20 V 250 mA 1.1 Ohms 10 V 1 V - 55 C + 150 C 500 mW Enhancement U-MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=.1A VDSS=30V
6.899A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-416-3 N-Channel 1 Channel 30 V 100 mA 2.2 Ohms 20 V 800 mV - 55 C + 150 C 150 mW Enhancement AEC-Q101 MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET SMOS Low RON Nch Io: 0.4A Vdss: 60V Vgss
671A magazzino
3.00025/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT USM-3 N-Channel 1 Channel 60 V 400 mA 1.75 Ohms 20 V 2.1 V 390 pC + 150 C 700 mW Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID -5.4A, VDSS -12V 11.734A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT UFM-3 P-Channel 1 Channel 12 V 5.4 A 14 mOhms 6 V 1 V 33 nC - 55 C + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=-2A VDSS=-20V 3.000A magazzino
3.00021/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT S-Mini-3 P-Channel 1 Channel 20 V 2 A 90 mOhms 12 V 1.2 V 5.1 nC - 55 C + 150 C 600 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID -2A, VDSS -30V 3.790A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-346-3 P-Channel 1 Channel 30 V 2 A 125 mOhms 20 V 2.2 V 3.4 nC - 55 C + 150 C 1.2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V
15.427A magazzino
51.00027/11/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 60 V 2 A 300 mOhms - 20 V, 10 V 800 mV + 150 C 1 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=-.25A VDSS=-20V 11.421A magazzino
48.00018/09/2026 previsto
Min: 1
Mult.: 1
: 8.000

Si SMD/SMT SOT-723-3 P-Channel 1 Channel 20 V 250 mA 1.1 Ohms 10 V 1 V - 55 C + 150 C 500 mW Enhancement U-MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID=-0.1A VDSS=-20V 12.014A magazzino
Min: 1
Mult.: 1
: 10.000

Si SMD/SMT SOT-883-3 P-Channel 1 Channel 20 V 100 mA 4.3 Ohms 10 V 1 V - 55 C + 150 C 100 mW Enhancement MOSVI Reel, Cut Tape
Toshiba MOSFET SM Sig N-CH MOS 30V 0.1A 20V VGSS 7.228A magazzino
10.00008/01/2027 previsto
Min: 1
Mult.: 1
: 10.000

Si SMD/SMT CST3-3 N-Channel 1 Channel 30 V 100 mA 2.3 Ohms 20 V 1.5 V - 55 C + 150 C 500 mW Enhancement U-MOSIII Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=.25A VDSS=20V 36.626A magazzino
144.000In ordine
Min: 1
Mult.: 1
: 8.000

Si SMD/SMT VESM-3 N-Channel 1 Channel 20 V 250 mA 1.1 Ohms 10 V 1 V 340 pC - 55 C + 150 C 500 mW Enhancement U-MOSIII Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=.8A VDSS=20V
4.043A magazzino
6.00021/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT UFM-3 N-Channel 1 Channel 20 V 800 mA 43 mOhms 8 V 400 mV 2 nC - 55 C + 150 C 500 mW Enhancement AEC-Q101 U-MOSVII-H Reel, Cut Tape, MouseReel