MOSFET di potenza OptiMOS™ 5

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
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Risultati: 86
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
Infineon Technologies MOSFET IFX FET 60V 1.553A magazzino
Min: 1
Mult.: 1
: 6.000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 60 V 21 A 3 mOhms 20 V 3.3 V 49 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 4.330A magazzino
Min: 1
Mult.: 1
: 6.000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 100 V 13 A 6.5 mOhms 20 V 3.8 V 43 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 4.762A magazzino
Min: 1
Mult.: 1
: 6.000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 60 V 21 A 3 mOhms 20 V 3.3 V 49 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >100-150V 2.872A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 174 A 4.4 mOhms 20 V 4.6 V 67 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V 2.842A magazzino
Min: 1
Mult.: 1
: 2.000
Si SMD/SMT N-Channel 1 Channel 60 V 399 A 1.1 Ohms 20 V 3.3 V 110 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >100-150V 1.661A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 122 A 6.3 mOhms 20 V 4.6 V 47 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V 4.063A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT N-Channel 1 Channel 60 V 137 A 3 mOhms 20 V 3.3 V 39 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 1.436A magazzino
Min: 1
Mult.: 1
: 2.000
Si SMD/SMT N-Channel 1 Channel 100 V 248 A 2.6 mOhms 20 V 3.8 V 89 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 2.425A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT N-Channel 1 Channel 60 V 330 A 1.05 mOhms 20 V 3.3 V 115 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 5.096A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT N-Channel 1 Channel 100 V 85 A 6.5 mOhms 20 V 3.8 V 34 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Dual-Side Cooled Drain-Down package 7.890A magazzino
Min: 1
Mult.: 1
: 4.000

Si SMD/SMT WSON-8 N-Channel 1 Channel 60 V 276 A 1.3 mOhms 20 V 3.3 V 90 nC - 55 C + 175 C 188 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance 4.000A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 30 V 224 A 1.15 mOhms 16 V 2 V 40 nC - 55 C + 175 C 107 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Drain-Down package 3.524A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 259 A 1.5 mOhms 20 V 3.3 V 70 nC - 55 C + 175 C 188 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 Power-Transistor,60V 2.831A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT TSON-12 N-Channel 1 Channel 60 V 510 A 1 mOhms 20 V 2.8 V 190 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 4.019A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 60 V 427 A 1.2 mOhms 20 V 2.8 V 171 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 4.165A magazzino
9.00022/10/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT TFN-10 N-Channel 2 Channel 60 V 233 A 1.6 mOhms 20 V 3.3 V 68 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 5.292A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT N-Channel 1 Channel 60 V 454 A 800 uOhms 20 V 3.6 V 185 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5 2.925A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 120 A 3.23 mOhms 20 V 2.8 V 47 nC - 55 C + 175 C 94 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET OptiMOS 5 power MOSFET 100 V in a TO-220 package 721A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 120 A 2.3 mOhms 20 V 3.8 V 168 nC - 55 C + 175 C 375 W Enhancement OptiMOS Tube


Infineon Technologies MOSFET IFX FET 60V 2.514A magazzino
Min: 1
Mult.: 1
: 1.800

Si SMD/SMT HDSOP-16 N-Channel 1 Channel 60 V 311 A 1.2 mOhms 20 V 2.1 V 106 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 2.753A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 100 V 273 A 2.05 mOhms 20 V 3.8 V 107 nC - 55 C + 175 C 333 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 15V-30V 6.919A magazzino
Min: 1
Mult.: 1
: 6.000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 25 V 47 A 580 uOhms 16 V 2 V 82 nC - 55 C + 150 C 2.1 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V 2.776A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 60 V 151 A 2.2 mOhms 20 V 2.3 V 53 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 5.268A magazzino
Min: 1
Mult.: 1
: 6.000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 60 V 151 A 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET > 60-80V 2.738A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 80 V 99 A 4.6 mOhms 20 V 2.3 V 38 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape