U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Risultati: 86
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
Toshiba MOSFET P-Ch U-MOS VI FET ID -12A -12V 1200pF 26.686A magazzino
Min: 1
Mult.: 1
: 3.000

Si P-Channel 1 Channel U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET 206.197A magazzino
Min: 1
Mult.: 1
: 8.000

Si SMD/SMT SOT-723-3 P-Channel 1 Channel 20 V 800 mA 390 mOhms 8 V 300 mV 1.6 nC + 150 C 500 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P Channel -20V -6A AECQ MOSFET 86.525A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 6 A 29.8 mOhms - 8 V, 6 V 1 V 12.8 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET P-Ch MOS -30A -60V 68W 3950pF 0.0218 5.309A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 30 A 21.8 mOhms - 20 V, 10 V 3 V 80 nC - 55 C + 175 C 68 W Enhancement AEC-Q100 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P-Ch MOS -40A -40V 68W 4140pF 0.0091 4.091A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 40 V 40 A 9.1 mOhms - 20 V, 10 V 3 V 83 nC - 55 C + 175 C 68 W Enhancement AEC-Q100 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=-3.2A VDSS=-20V 13.744A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 3.2 A 93 mOhms 8 V 1 V 4.7 nC - 55 C + 150 C 500 mW Enhancement U-MOSVI Reel, Cut Tape
Toshiba MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF 455A magazzino
Min: 1
Mult.: 1
: 4.000

Si SMD/SMT ES6-6 P-Channel 1 Channel 20 V 2.6 A 250 mOhms 8 V 1 V 4.7 nC - 55 C + 150 C 500 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=-3.6A VDSS=-30V 12.244A magazzino
Min: 1
Mult.: 1
: 4.000

Si SMD/SMT SOT-563-6 P-Channel 1 Channel 30 V 3.6 A 50 mOhms 12 V 1.2 V 7.9 nC - 55 C + 150 C 700 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel

Toshiba MOSFET N-Ch -30V FET 1650pF -7A 1.9W 5.829A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT SOP-8 P-Channel 1 Channel 40 V 7 A 33 mOhms - 25 V, 20 V 2 V 34 nC - 55 C + 150 C 1.9 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD 9.093A magazzino
Min: 1
Mult.: 1
: 3.000

Si N-Channel 2 Channel U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET P-ch VDSS=-20V, VGSS=+6/-8V, ID=-0.8A, RDS(ON)=0.39Ohm @ 4.5V, in VESM package 19.030A magazzino
Min: 1
Mult.: 1
: 8.000

Si SMD/SMT VESM-3 P-Channel 1 Channel 20 V 800 mA 4 Ohms - 8 V, 6 V 1 V 1.6 nC - 55 C + 150 C 150 mW Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel

Toshiba MOSFET N-Ch -30V FET 1650pF -9A 1.9W 3.437A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT SOP-8 P-Channel 1 Channel 30 V 9 A 28 mOhms - 25 V, 20 V 2 V 39 nC + 150 C 1.9 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID -3.5A, -60V VDSS 191.099A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 60 V 3.5 A 164 mOhms - 20 V, 10 V 800 mV 15.1 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF 30.000A magazzino
30.00015/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-416-3 N-Channel 1 Channel 20 V 800 mA 235 mOhms 8 V 400 mV 1 nC - 55 C + 150 C 500 mW Enhancement U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET P-Channel 15.640A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT UFM-3 P-Channel 1 Channel 20 V 5.5 A 24.9 mOhms 8 V 1 V 12.8 nC - 55 C + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=--0.4A VDSS=-60V 31.045A magazzino
36.00021/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-346-3 P-Channel 1 Channel 60 V 400 mA 1.3 Ohms - 20 V, 10 V 2 V 3 nC - 55 C + 150 C 1.2 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P-Ch Small Signal 270pF -2A -20V 4.6nC 47.803A magazzino
3.00015/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-346-3 P-Channel 1 Channel 20 V 2 A 311 mOhms 8 V 1 V 4.6 nC - 55 C + 150 C 600 mW Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P-Ch U-MOSVI FET ID -4A -20VDSS 630pF 32.264A magazzino
24.00017/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23-3 P-Channel 1 Channel 20 V 4 A 150 mOhms 8 V 1 V 10.4 nC - 55 C + 150 C 1 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS 42.752A magazzino
87.00002/10/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si P-Channel 1 Channel U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P Channel -60V -3.5A AECQ MOSFET 105.212A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 60 V 3.5 A 164 mOhms - 20 V, 10 V 2 V 15.1 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID: -2A, VDSS: -60V 33.506A magazzino
51.00027/11/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 60 V 2 A 300 mOhms - 20 V, 10 V 800 mV + 150 C 1 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET P-CH VDSS:-30V VGSS:-12/+6V ID 177.850A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 30 V 6 A 42 mOhms - 12 V, 6 V 1.2 V 8.2 nC - 55 C + 150 C 2 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=4A VDSS=20V 22.627A magazzino
27.00004/09/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 20 V 4 A 25 mOhms 8 V 400 mV 3.6 nC - 55 C + 150 C 2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V 115.221A magazzino
Min: 1
Mult.: 1
: 10.000

Si SMD/SMT CST3-3 N-Channel 1 Channel 20 V 1.4 A 840 mOhms 8 V 400 mV 1 nC - 55 C + 150 C 500 mW Enhancement U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V 93.894A magazzino
Min: 1
Mult.: 1
: 3.000
Si SMD/SMT UDFN-6 P-Channel 1 Channel 20 V 10 A 15.3 mOhms 8 V 300 mV 29.9 nC - 55 C + 150 C 2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel