onsemi MOSFET SiC

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Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Qualifica
Nome commerciale

onsemi MOSFET SiC SIC MOSFET 900V TO247-4L 20MOHM
Scheda dati
2.252A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC
onsemi MOSFET SiC 750V/9MOSICFETG4TO263-7
Scheda dati
688A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi MOSFET SiC 750V/18MOSICFETG4TO263-7
Scheda dati
1.247A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET

onsemi MOSFET SiC Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L
Scheda dati
1.292A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi MOSFET SiC Silicon Carbide MOSFET, N-Channel - EliteSiC ,21mohm, 650V, M2, TO247-4L
Scheda dati
428A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-3L 160MOHM 1200V
Scheda dati
2.549A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 650V
Scheda dati
1.263A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC

onsemi MOSFET SiC Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L
Scheda dati
569A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC
onsemi MOSFET SiC 1200V/23MOSICFETG4TO247-4
Scheda dati
768A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 53 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement SiC FET

onsemi MOSFET SiC SIC MOS TO247-4L 650V
Scheda dati
776A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC
onsemi MOSFET SiC 750V/23MOSICFETG4TO263-7
Scheda dati
812A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 64 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi MOSFET SiC 750V/33MOSICFETG4TO263-7
Scheda dati
490A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET

onsemi MOSFET SiC Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L
Scheda dati
430A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC
onsemi MOSFET SiC 650V/40MOSICFETG3TO247-3
Scheda dati
1.295A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET

onsemi MOSFET SiC Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L
Scheda dati
1.824A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC
onsemi MOSFET SiC 1200V/53MOSICFETG4TO247-3
Scheda dati
678A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 34 A 67 mOhms - 20 V, + 20 V 6 V - 55 C + 175 C 263 W SiC FET
onsemi MOSFET SiC 650V/40MOSICFETG3TO247-4
Scheda dati
3.300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L
Scheda dati
3.923A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi MOSFET SiC SIC MOS TO247-4L 40MOHM 1200V
Scheda dati
1.511A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi MOSFET SiC SIC MOS D2PAK-7L 40MOHM 1200V
Scheda dati
1.014A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC

onsemi MOSFET SiC 20MW 1200V
Scheda dati
996A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement AEC-Q101 EliteSiC

onsemi MOSFET SiC 60MOHM
Scheda dati
265A magazzino
Min: 1
Mult.: 1
Through Hole TO-247-3 N-Channel 1 Channel 900 V 46 A 84 mOhms - 8 V, + 22 V 4.3 V 87 nC - 55 C + 175 C 221 W Enhancement AEC-Q101 EliteSiC
onsemi MOSFET SiC 1200V/80MOSICFETG3TO263-7
Scheda dati
781A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi MOSFET SiC 750V/18MOSICFETG4TO247-4
Scheda dati
650A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi MOSFET SiC 750V/23MOSICFETG4TO247-3
Scheda dati
595A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET