MOSFET SiC

 MOSFET SiC
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more. Please view our large selection of SiC MOSFETs below.
Risultati: 1.274
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 187A magazzino
Min: 1
Mult.: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET 750 V G2 140A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V, 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 66A magazzino
Min: 1
Mult.: 1
Nastrati: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET 750 V G2 133A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, 23 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
IXYS MOSFET SiC 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L 100A magazzino
45002/06/2026 previsto
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Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 65 A 52 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 375 W Enhancement
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 140A magazzino
Min: 1
Mult.: 1
Nastrati: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
APC-E MOSFET SiC 650V 50mR, TO-247-4L, Industrial Grade 288A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies MOSFET SiC CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 70A magazzino
Min: 1
Mult.: 1
Nastrati: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
APC-E MOSFET SiC 1200V 75mR, TO-247-4L, Automotive Grade 300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies MOSFET SiC CoolSiC Automotive Power Device 750 V G2 28A magazzino
75026/03/2026 previsto
Min: 1
Mult.: 1
Nastrati: 750

SMD/SMT HD-SOP-22 N-Channel 1 Channel 750 V 53 A 65.6 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET 750 V G2 118A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 50 A 41.3 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET 750 V G2 140A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, 23 V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 140A magazzino
Min: 1
Mult.: 1
Nastrati: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
IXYS MOSFET SiC 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L 78A magazzino
80002/06/2026 previsto
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 65 A 53 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 417 W Enhancement
APC-E MOSFET SiC 1200V 75mR, TO-247-4L, Industrial Grade 300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
Infineon Technologies MOSFET SiC CoolSiC MOSFET 750 V G2 138A magazzino
1.00023/02/2026 previsto
Min: 1
Mult.: 1
Nastrati: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 34 A 65 mOhms - 7 V, 23 V 5.6 V 24 nC - 55 C + 175 C 135 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 119A magazzino
Min: 1
Mult.: 1
Nastrati: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
APC-E MOSFET SiC 650V 50mR, TO-247-4L, Automotive Grade 300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET 1.165A magazzino
1.500In ordine
Min: 1
Mult.: 1
Nastrati: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 154 A 13.1 mOhms - 7 V, + 23 V 5.6 V 113 nC - 55 C + 175 C 651 W Enhancement
Central Semiconductor MOSFET SiC 1700V Through-Hole MOSFET N-Channel SiC 30A magazzino
Min: 1
Mult.: 1
Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 26 A 40 mOhms 20 V 2.4 V - 55 C + 175 C 28 W Depletion
Wolfspeed MOSFET SiC SiC, MOSFET, 21mohm, 1200V, TO-263-7 XL T&R, Industrial 243A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 248 A 35 mOhms - 8 V, + 19 V 3.8 V 169 nC - 40 C + 175 C 500 W Enhancement
STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 252A magazzino
600In ordine
Min: 1
Mult.: 1
Nastrati: 600


onsemi MOSFET SiC SIC MOSFET 900V TO247-4L 20MOHM 2.252A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 900 V 118 A 28 mOhms - 8 V, + 22 V 4.3 V 196 nC - 55 C + 175 C 484 W Enhancement EliteSiC
Infineon Technologies MOSFET SiC SIC_DISCRETE 799A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
onsemi MOSFET SiC 750V/9MOSICFETG4TO263-7 688A magazzino
Min: 1
Mult.: 1
Nastrati: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET