STMicroelectronics MOSFET

Risultati: 1.354
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
STMicroelectronics MOSFET N-Ch 100 Volt 50 Amp 2.433A magazzino
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Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 50 A 28 mOhms - 20 V, 20 V 2 V 62 nC - 55 C + 175 C 150 W Enhancement STripFET Tube
STMicroelectronics MOSFET Low charge STripFET 1.313A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 40 A 45 mOhms - 20 V, 20 V 2 V 75 nC - 55 C + 150 C 160 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 60 Volt 55 Amp 4.051A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 50 A 18 mOhms - 20 V, 20 V 2 V 44.5 nC - 55 C + 175 C 110 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 60 Volt 60 Amp 3.519A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 60 A 16 mOhms - 20 V, 20 V 2 V 54 nC - 55 C + 175 C 110 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 60 Volt 60 Amp 2.326A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 60 A 14 mOhms - 15 V, 15 V 1 V 35 nC - 65 C + 175 C 110 W Enhancement Tube
STMicroelectronics MOSFET Low charge STripFET 2.957A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 75 A 34 mOhms - 20 V, 20 V 2 V 84 nC - 50 C + 150 C 190 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 75 Volt 80 Amp 2.077A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 80 A 11 mOhms - 20 V, 20 V 2 V 117 nC - 55 C + 175 C 300 W Enhancement STripFET Tube
STMicroelectronics MOSFET N Ch 100V 0.012 Ohm 30A 1.633A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 80 A 15 mOhms - 20 V, 20 V 2 V 189 nC - 55 C + 175 C 300 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 55 Volt 80 Amp 1.528A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 55 V 80 A 6.5 mOhms - 20 V, 20 V 2 V 142 nC - 55 C + 175 C 300 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 60 Volt 5 Amp 4.428A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT SOIC-8 N-Channel 1 Channel 60 V 5 A 55 mOhms - 20 V, 20 V 1 V 17 nC - 55 C + 150 C 2.5 W Enhancement AEC-Q100 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 60 V 0.017 Ohm 7.5 A STripFET II 6.427A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT SOIC-8 N-Channel 1 Channel 60 V 7.5 A 19.5 mOhms - 20 V, 20 V 1 V 25 nC - 55 C + 150 C 2.5 W Enhancement STripFET Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET Low charge STripFET 887A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 75 A 34 mOhms - 20 V, 20 V 2 V 84 nC - 50 C + 150 C 190 W Enhancement STripFET Tube
STMicroelectronics MOSFET Automotive grade N-channel 650V 89 mOhm 32A MDmesh DM6 half-bridge Power MOSFET 45A magazzino
Min: 1
Mult.: 1
Nastrati: 200

Si N-Channel 650 V 32 A 89 mOhms AQG 324 Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 650 V, 132 mOhm typ., 17 A MDmesh M9 Power MOSFET 775A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 17 A 160 mOhms - 30 V, 30 V 4.2 V 32 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package 324A magazzino
2.50017/08/2026 previsto
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT N-Channel 1 Channel 800 V 16 A 220 Ohms - 30 V, 30 V 4 V 25.9 nC - 55 C + 150 C 105 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package 816A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 10 A 450 mOhms - 30 V, 30 V 3 V 17.3 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET 2.940A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT PowerFLAT-4 N-Channel 1 Channel 100 V 158 A 3.2 mOhms - 20 V, 20 V 4 V 90 nC - 55 C + 175 C 167 W Enhancement STripFET Reel, Cut Tape


STMicroelectronics MOSFET Automotive N-Channel Enhancement Mode Logic Level 40V, 1mOhm, 305A STripFET F8 401A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT PowerFLAT-8 N-Channel 1 Channel 40 V 304 A 1 mOhms - 16 V, 16 V 2 V 70 nC - 55 C + 175 C 167 W Enhancement AEC-Q101 Reel, Cut Tape
STMicroelectronics MOSFET N-channel 650 V, 128 mOhm typ., 20 A MDmesh M9 Power MOSFET 101A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20 A 150 mOhms - 30 V, 30 V 3.2 V 32 nC - 55 C + 150 C 140 W Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 1.060A magazzino
Min: 1
Mult.: 1

Si Tube
STMicroelectronics MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET 888A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 600 mOhms - 30 V, 30 V 4 V 10.7 nC - 55 C + 150 C 86 W Enhancement Tube
STMicroelectronics MOSFET N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET 82A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 56 A 43 mOhms - 30 V, 30 V 4.5 V 78.6 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET N-Ch 30 Volt 40 Amp 1.360A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 30 V 40 A 18 mOhms - 16 V, 16 V 2.5 V 10.5 nC - 55 C + 175 C 70 W Enhancement STripFET Tube
STMicroelectronics MOSFET N-Ch 60 Volt 60 Amp 461A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 60 V 60 A 16 mOhms - 20 V, 20 V 4 V 49 nC - 55 C + 175 C 30 W Enhancement STripFET Tube
STMicroelectronics MOSFET RF POWER transistor, N-channel enhancement-mode, lateral MOSFET 203A magazzino
Min: 1
Mult.: 1

Si SMD/SMT PowerSO-10RF-2 N-Channel 1 Channel 65 V 2.5 A 760 mOhms - 20 V, 20 V 2 V - 65 C + 165 C 31.7 W Enhancement Tube