STMicroelectronics MOSFET

Risultati: 1.347
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
STMicroelectronics MOSFET N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 522A magazzino
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Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 95 A 23 mOhms - 30 V, 30 V 4.2 V 230 nC - 55 C + 150 C 463 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 580A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 54 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET 354A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 95 A - 30 V, 30 V 4.2 V 230 nC - 55 C + 150 C Enhancement Tube
STMicroelectronics MOSFET N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET 1.195A magazzino
Min: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 650 V 54 A 45 mOhms - 30 V, 30 V 4.2 V 80 nC - 55 C + 150 C 312 W Enhancement Tube
STMicroelectronics MOSFET N-channel 900 V, 0.21 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package 4.630A magazzino
70024/03/2026 previsto
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 900 V 20 A 210 mOhms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 250 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-CH 100V 2.1mOhm 180A STripFET VI 8.894A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT H2PAK-2 N-Channel 1 Channel 100 V 180 A 2.5 mOhms - 20 V, 20 V 3.8 V 180 nC - 55 C + 175 C 315 W Enhancement STripFET Reel, Cut Tape, MouseReel


STMicroelectronics MOSFET N-channel 40 V, 1.3 m? typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 2.643A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

Si Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET Dual N-Ch 30V 11A 0.016 Ohm STripFET V 40.826A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 2 Channel 30 V 40 A 16 mOhms - 22 V, 22 V 1.5 V 4.5 nC - 55 C + 175 C 60 W Enhancement AEC-Q100 STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 33.270A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT PowerFLAT-3.3x3.3-8 P-Channel 1 Channel 30 V 6 A 30 mOhms - 20 V, 20 V 1 V 12 nC - 55 C + 150 C 2.9 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 98.381A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT PowerFLAT-3.3x3.3-8 P-Channel 1 Channel 30 V 9 A 12 mOhms - 20 V, 20 V 1 V 24 nC - 55 C + 150 C 3 W Enhancement STripFET Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 600 Volt 20 Amp 5.313A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20 A 290 mOhms - 30 V, 30 V 3 V 54 nC - 65 C + 150 C 192 W Enhancement FDmesh Tube
STMicroelectronics MOSFET Automotive-grade N-channel 400 V, 0.063 Ohm typ., 38 A MDmesh DM2 Power MOSFET i 4.772A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 400 V 38 A 72 mOhms - 25 V, 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement AEC-Q101 MDmesh Tube
STMicroelectronics MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3 1.861A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 2.2 A 3.6 Ohms - 30 V, 30 V 3 V 15 nC - 55 C + 150 C 20 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package 953A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 275 mOhms - 25 V, 25 V 2 V 20 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 620V 1.1 889A magazzino
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Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 5.5 A 1.28 Ohms - 30 V, 30 V 3 V 34 nC - 55 C + 150 C 90 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET PTD HIGH VOLTAGE 1.992A magazzino
Min: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 5.4 A - 55 C + 150 C Enhancement
STMicroelectronics MOSFET N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra na 704A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 14 A 375 mOhms - 30 V, 30 V 4 V 32 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH 914A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 7 A 1.2 Ohms - 30 V, 30 V 3 V 41 nC - 55 C + 150 C 125 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-channel 620 V 8.4 A TO-220 TO-22 976A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 8.4 A 680 mOhms - 30 V, 30 V 3 V 42 nC - 55 C + 150 C 30 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep 970A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 350 mOhms - 25 V, 25 V 2 V 17 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET 504A magazzino
Min: 1
Mult.: 1
Nastrati: 1.800

Si SMD/SMT TO-LL-8 N-Channel 1 Channel 600 V 30 A 99 mOhms - 25 V, 25 V 4.75 V 44.3 nC - 55 C + 150 C 230 W Enhancement MDmesh Reel, Cut Tape

STMicroelectronics MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in TO-247 package 382A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 28 A 110 mOhms - 25 V, 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP pa 841A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 188 mOhms - 25 V, 25 V 2 V 29 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3 963A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 3.8 A 2 Ohms - 30 V, 30 V 3 V 22 nC - 55 C + 150 C 25 W Enhancement SuperMESH Tube


STMicroelectronics MOSFET N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package 2.440A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 650 V 3.5 A 1.5 Ohms - 25 V, 25 V 2.25 V 6 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube