Risultati: 31
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione

Infineon Technologies MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 274A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 20 V, 20 V 2.1 V 255 nC - 55 C + 150 C 415 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_LEGACY 2.125A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.2 A 1.4 Ohms - 20 V, 20 V 3.9 V 13 nC - 55 C + 150 C 38 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 600V 15A TO220FP-3 CoolMOS C3 581A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 15 A 280 mOhms - 20 V, 20 V 3.9 V 63 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 20.7A D2PAK-2 CoolMOS C3 1.867A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_LEGACY 3.468A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 7.6 A 600 mOhms - 20 V, 20 V 3.9 V 32 nC - 55 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_LEGACY 2.936A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 4.5 A 950 mOhms - 20 V, 20 V 3.9 V 19 nC - 55 C + 150 C 50 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET LOW POWER_LEGACY 3.804A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 3.9 V 21 nC - 55 C + 150 C 83 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 500V 21A D2PAK-2 CoolMOS C3 1.452A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 21 A 190 mOhms - 20 V, 20 V 3.9 V 95 nC - 55 C + 150 C 208 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_LEGACY 261A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 4.5 A 950 mOhms - 20 V, 20 V 3.9 V 22 nC - 55 C + 150 C 50 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET LOW POWER_LEGACY 1.550A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 20 V, 20 V 2.1 V 31 nC - 55 C + 150 C 74 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 20.7A TO220-3 420A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 20.7 A 160 mOhms - 20 V, 20 V 3.9 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3 747A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 188A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 34.6 A 100 mOhms - 20 V, 20 V 2.1 V 150 nC - 55 C + 150 C 313 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 34.6A TO247-3 CoolMOS C3 34A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 34.6 A 81 mOhms - 20 V, 20 V 2.1 V 200 nC - 55 C + 150 C 313 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 703A magazzino
51026/03/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 47 A 70 mOhms - 20 V, 20 V 2.1 V 252 nC - 55 C + 150 C 415 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 560V 32A TO247-3 CoolMOS C3 1.395A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 32 A 110 mOhms - 20 V, 20 V 2.1 V 170 nC - 55 C + 150 C 284 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 526A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 11 A 380 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 125 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET N-Ch 650V 15A TO220-3 264A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15 A 280 mOhms - 20 V, 20 V 3.9 V 63 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS C3 446A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 11 A 380 mOhms - 20 V, 20 V 2.1 V 45 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 20.7A TO220FP-3 CoolMOS C3 135A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 34.5 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 7.3A TO220-3 245A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 3.9 V 21 nC - 55 C + 150 C 83 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 11A TO220-3 191A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 380 mOhms - 20 V, 20 V 3 V 45 nC - 55 C + 150 C 125 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 20.7A TO220-3 804A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.7 A 190 mOhms - 20 V, 20 V 2.1 V 87 nC - 55 C + 150 C 208 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 650V 24.3A TO220-3 240A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24.3 A 160 mOhms - 20 V, 20 V 3.9 V 104.9 nC - 55 C + 150 C 240 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET N-Ch 560V 16A TO247-3 CoolMOS C3 388A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 16 A 280 mOhms - 20 V, 20 V 3.9 V 66 nC - 55 C + 150 C 160 W Enhancement CoolMOS Tube