STMicroelectronics Transistor

Risultati: 1.980
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STMicroelectronics Transistor RF MOSFET 180 W, 28 V, 1.3 to 1.6 GHz RF power LDMOS transistor 20A magazzino
Min: 1
Mult.: 1
Nastrati: 120

RF MOSFET Transistors Si SMD/SMT B4E-5 N-Channel
STMicroelectronics MOSFET N-Ch, 620V-1.1ohms 5.5A 1.671A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na 1.787A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics MOSFET N-channel 600 V 0.3 20 Ohm 10A MDmesh II 2.235A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

MOSFETs Si SMD/SMT PowerFLAT-8x8-5 N-Channel
STMicroelectronics Moduli MOSFET ACEPACK 2 power module, 3-level topology, 1200 V, 13 mOhm typ. SiC Power MOSFET 41A magazzino
Min: 1
Mult.: 1

MOSFET Modules SiC Press Fit
STMicroelectronics MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II 2.119A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

MOSFETs Si SMD/SMT PowerFLAT-8x8-HV-5 N-Channel
STMicroelectronics MOSFET N-Ch 650V 0.135 Ohm typ. 15A MDmeshM5 2.921A magazzino
Min: 1
Mult.: 1
Nastrati: 3.000

MOSFETs Si SMD/SMT PowerFLAT-8x8-5 N-Channel
STMicroelectronics Transistor Darlington Eight NPN Array 36.170A magazzino
Min: 1
Mult.: 1

Darlington Transistors Through Hole PDIP-18 NPN
STMicroelectronics MOSFET N-Ch 600V 0.63 6.5A MDmesh II Power MO 2.341A magazzino
Min: 1
Mult.: 1
Nastrati: 2.500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3) N-Channel
STMicroelectronics Moduli MOSFET ACEPACK 2 power module, fourpack topology, 650 V, 23 mOhm SiC Power MOSFET NTC 18A magazzino
Min: 1
Mult.: 1

MOSFET Modules Press Fit ACEPACK
STMicroelectronics MOSFET SiC Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 37A magazzino
Min: 1
Mult.: 1
Nastrati: 1.800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET 1.003A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220FP-3 N-Channel
STMicroelectronics MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET 1.047A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220FP-3 N-Channel

STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 540A magazzino
60020/04/2026 previsto
Min: 1
Mult.: 1
Nastrati: 600

IGBTs Si SMD/SMT HU3PAK-7
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 766A magazzino
Min: 1
Mult.: 1

IGBTs Si Through Hole TO-247-3
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT 54A magazzino
Min: 1
Mult.: 1

IGBT Transistors
STMicroelectronics MOSFET N-Channel 40 V StripFET II Pwr Mos 870A magazzino
Min: 1
Mult.: 1

MOSFETs Si Through Hole TO-220-3 N-Channel
STMicroelectronics Transistor bipolari - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model 145A magazzino
Min: 1
Mult.: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 NPN
STMicroelectronics Transistor bipolari - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model 21A magazzino
Min: 1
Mult.: 1
BJTs - Bipolar Transistors Si SMD/SMT UB-4 PNP


STMicroelectronics IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a 566A magazzino
Min: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 154A magazzino
1.00001/03/2027 previsto
Min: 1
Mult.: 1
Nastrati: 1.000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 197A magazzino
Min: 1
Mult.: 1
Nastrati: 1.000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 532A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 338A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFET SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 693A magazzino
Min: 1
Mult.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel