200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.

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Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Confezione
Infineon Technologies IRFP4229PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V
Scheda dati
602A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 44 A 46 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 310 W Enhancement Tube
Infineon Technologies MOSFET IR FET >60-400V
Scheda dati
1.551A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 200 V 76 A 20 mOhms - 20 V, 20 V 5 V 69 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies IRFP4668PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V
Scheda dati
8.282A magazzino
6.26025/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 200 V 130 A 9.7 mOhms - 30 V, 30 V 3 V 161 nC - 55 C + 175 C 520 W Enhancement Tube

Infineon Technologies MOSFET MOSFT 200V 49A 40mOhm 156nCAC
Scheda dati
25.114A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms - 20 V, 20 V 4 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 18A 150mOhm 44.7nC
Scheda dati
29.246A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 18 A 150 mOhms - 20 V, 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET IR FET >60-400V
Scheda dati
322A magazzino
40025/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 250 V 93 A 17.5 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 18A 150mOhm 44.7nC
Scheda dati
6.977A magazzino
8.97525/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 150 mOhms - 20 V, 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Tube

Infineon Technologies MOSFET 200V, 3.7A, 78 mOhm 29 nC Qg, SO-8
Scheda dati
4.937A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 4.000

Si SMD/SMT SOIC-8 N-Channel 1 Channel 200 V 3.7 A 78 mOhms - 20 V, 20 V 4 V 28 nC - 55 C + 150 C 2.5 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 200V 49A 40mOhm 156nCAC
Scheda dati
4.785A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms - 20 V, 20 V 1.8 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
Scheda dati
12.878A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 3.000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 200 V 24 A 78 mOhms - 20 V, 20 V 1.8 V 25 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 62A 26mOhm 70nC Qg
Scheda dati
5.296A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 62 A 26 mOhms - 30 V, 30 V 5 V 70 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 250V 45A 48mOhm 72nC Qg
Scheda dati
6.744A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 45 A 48 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFB4227PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 2.575A magazzino
Min: 1
Mult.: 1

Si Tube
Infineon Technologies MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC
Scheda dati
13.466A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 3.000

Si SMD/SMT TSOP-6 N-Channel 1 Channel 200 V 600 mA 2.2 Ohms - 30 V, 30 V 2 V 3.9 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET MOSFT 200V 30A 75mOhm 82nCAC
Scheda dati
1.657A magazzino
1.60021/05/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms - 20 V, 20 V 1.8 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 44A 54mOhm 60nC
Scheda dati
1.426A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 44 A 54 mOhms - 30 V, 30 V 5 V 60 nC - 55 C + 175 C 320 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET MOSFT 200V 24A 78mOhm 25nC Qg
Scheda dati
4.629A magazzino
2.40005/03/2026 previsto
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 24 A 77.5 mOhms - 20 V, 20 V 5 V 38 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IRFB4229PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V
Scheda dati
321A magazzino
1.00025/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220AB-3 N-Channel 1 Channel 250 V 46 A 46 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Tube
Infineon Technologies IRFP4227PBFXKMA1
Infineon Technologies MOSFET IR FET >60-400V 90A magazzino
80028/01/2027 previsto
Min: 1
Mult.: 1

Si Tube

Infineon Technologies MOSFET MOSFT 200V 30A 75mOhm 82nCAC
Scheda dati
1.159A magazzino
3.20025/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms - 20 V, 20 V 4 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
Scheda dati
1.760A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 9.3 A 300 mOhms - 20 V, 20 V 2 V 23.3 nC - 55 C + 175 C 82 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 44A 54mOhm 60nC
Scheda dati
112A magazzino
2.000In ordine
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 44 A 54 mOhms - 30 V, 30 V 1.8 V 91 nC - 55 C + 175 C 3.8 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 100mOhm 18A 18nC Qg for Aud
Scheda dati
2.400A magazzino
2.00026/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 100 mOhms - 20 V, 20 V 1.8 V 18 nC - 55 C + 175 C 100 W Enhancement Tube

Infineon Technologies MOSFET MOSFT 200V 94A 23mOhm 180nCAC
Scheda dati
2.792In ordine
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 94 A 23 mOhms - 30 V, 30 V 1.8 V 180 nC - 55 C + 175 C 580 W Enhancement Tube
Infineon Technologies MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg
Scheda dati
160A magazzino
9.600In ordine
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 72 A 22 mOhms - 20 V, 20 V 1.8 V 100 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape, MouseReel