NBT SRAMs

GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that utilize all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock.

Risultati: 1.613
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Dimensioni memoria Organizzazione Tempo di accesso Frequenza di clock massima Tipo di interfaccia Tensione di alimentazione - Max. Tensione di alimentazione - Min. Corrente di alimentazione - Max Temperatura di lavoro minima Temperatura di lavoro massima Stile di montaggio Package/involucro Confezione
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 1A magazzino
Min: 1
Mult.: 1

36 Mbit 2 M x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 235 mA, 275 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M 23A magazzino
Min: 1
Mult.: 1

36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 305 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M 6A magazzino
Min: 1
Mult.: 1

72 Mbit 4 M x 18 8 ns 167 MHz Parallel 3.6 V 2.3 V 215 mA, 260 mA - 40 C + 70 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 13A magazzino
Min: 1
Mult.: 1
36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 36 9M 12A magazzino
Min: 1
Mult.: 1

9 Mbit 256 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 130 mA, 140 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 36 9M 55A magazzino
Min: 1
Mult.: 1

9 Mbit 256 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 150 mA, 160 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M 2A magazzino
Min: 1
Mult.: 1

36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 128K x 36 4M 67A magazzino
Min: 1
Mult.: 1

4 Mbit 128 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 130 mA, 140 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 18 9M 50A magazzino
Min: 1
Mult.: 1

9 Mbit 512 k x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 130 mA, 155 mA 0 C + 70 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 18 18M 2A magazzino
Min: 1
Mult.: 1

18 Mbit 1 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 195 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 1A magazzino
Min: 1
Mult.: 1

36 Mbit 2 M x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 215 mA, 255 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M 5A magazzino
Min: 1
Mult.: 1
72 Mbit 4 M x 18 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 275 mA, 395 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 23A magazzino
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 305 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 14A magazzino
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 19A magazzino
Min: 1
Mult.: 1
No
36 Mbit 2 M x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 215 mA, 255 mA 0 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 4M x 36 144M 26A magazzino
Min: 1
Mult.: 1

144 Mbit 4 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 330 mA, 400 mA 0 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5/3.3V 8M x 36 288M 8A magazzino
Min: 1
Mult.: 1

288 Mbit 8 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 520 mA, 610 mA - 40 C + 100 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 15A magazzino
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 230 mA, 285 mA 0 C + 70 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 18 9M 53A magazzino
Min: 1
Mult.: 1
No
9 Mbit 512 k x 18 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 140 mA, 150 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 14A magazzino
Min: 1
Mult.: 1
No
36 Mbit 1 M x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 210 mA, 220 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 36 144M 9A magazzino
Min: 1
Mult.: 1
No
144 Mbit 4 M x 36 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 415 mA, 535 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 1.8/2.5V 256K x 72 18M 90A magazzino
Min: 1
Mult.: 1
18 Mbit 256 k x 72 5.5 ns 250 MHz Parallel 2.7 V 1.7 V 275 mA, 360 mA - 40 C + 85 C SMD/SMT BGA-209 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M 34A magazzino
Min: 1
Mult.: 1

18 Mbit 512 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 200 mA, 210 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M 10A magazzino
1503/03/2026 previsto
Min: 1
Mult.: 1
72 Mbit 2 M x 36 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 295 mA, 435 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 1M x 18 18M 6A magazzino
Min: 1
Mult.: 1

18 Mbit 1 M x 18 7.5 ns 150 MHz Parallel 2.7 V 1.7 V 180 mA, 200 mA - 40 C + 85 C SMD/SMT BGA-165 Tray