NBT SRAMs

GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that utilize all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock.

Risultati: 1.613
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Dimensioni memoria Organizzazione Tempo di accesso Frequenza di clock massima Tipo di interfaccia Tensione di alimentazione - Max. Tensione di alimentazione - Min. Corrente di alimentazione - Max Temperatura di lavoro minima Temperatura di lavoro massima Stile di montaggio Package/involucro Confezione
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M 173A magazzino
Min: 1
Mult.: 1

72 Mbit 4 M x 18 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 250 mA, 335 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 4M x 36 144M 9A magazzino
Min: 1
Mult.: 1

144 Mbit 4 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 330 mA, 400 mA 0 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 1.8/2.5V 256K x 72 18M 64A magazzino
Min: 1
Mult.: 1
18 Mbit 256 k x 72 5.5 ns 250 MHz Parallel 2.7 V 1.7 V 275 mA, 360 mA - 40 C + 85 C SMD/SMT BGA-209 Tray
GSI Technology SRAM NBT SRAMs, 9Mb, x32, 150MHz, Commercial Temp 408A magazzino
Min: 1
Mult.: 1

9 Mbit 256 k x 32 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 130 mA, 140 mA 0 C + 70 C SMD/SMT TQFP-100
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M 215A magazzino
14408/07/2026 previsto
Min: 1
Mult.: 1

18 Mbit 512 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 200 mA, 210 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5/3.3V 4M x 36 144M 14A magazzino
Min: 1
Mult.: 1

144 Mbit 4 M x 36 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 375 mA, 490 mA - 40 C + 100 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 18 18M 173A magazzino
Min: 1
Mult.: 1

18 Mbit 1 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 195 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 1.8/2.5V 1M x 36 32M 6A magazzino
Min: 1
Mult.: 1
36 Mbit 1 M x 36 5.5 ns 250 MHz Parallel 2.7 V 1.7 V 260 mA, 315 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 6A magazzino
Min: 1
Mult.: 1
36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 36 18M 9A magazzino
Min: 1
Mult.: 1

18 Mbit 512 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 200 mA, 210 mA - 40 C + 100 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 256K x 36 9M 72A magazzino
Min: 1
Mult.: 1

9 Mbit 256 k x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 160 mA, 190 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 15A magazzino
Min: 1
Mult.: 1

36 Mbit 2 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 185 mA, 220 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 4A magazzino
Min: 1
Mult.: 1

36 Mbit 2 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 205 mA, 240 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M 7A magazzino
Min: 1
Mult.: 1

36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 260 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 4M x 18 72M 6A magazzino
Min: 1
Mult.: 1

72 Mbit 4 M x 18 8 ns 167 MHz Parallel 3.6 V 2.3 V 215 mA, 260 mA - 40 C + 70 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 32M 3A magazzino
Min: 1
Mult.: 1
36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 1.8/2.5V 1M x 72 72M 4A magazzino
Min: 1
Mult.: 1

72 Mbit 1 M x 72 7.5 ns 200 MHz Parallel 2.7 V 1.7 V 295 mA, 405 mA - 40 C + 85 C SMD/SMT BGA-209 Tray
GSI Technology SRAM 1.8/2.5V 2M x 36 72M 7A magazzino
Min: 1
Mult.: 1
72 Mbit 2 M x 36 6.5 ns 250 MHz Parallel 2.7 V 1.7 V 275 mA, 380 mA - 40 C + 85 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 1.8/2.5V 2M x 36 72M 7A magazzino
Min: 1
Mult.: 1

72 Mbit 2 M x 36 6.5 ns 250 MHz Parallel 2.7 V 1.7 V 295 mA, 435 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 36 72M 12A magazzino
Min: 1
Mult.: 1

72 Mbit 2 M x 36 6.5 ns 250 MHz Parallel 3.6 V 2.3 V 275 mA, 380 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 36 36M 2A magazzino
Min: 1
Mult.: 1

36 Mbit 1 M x 36 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 225 mA, 260 mA - 40 C + 85 C SMD/SMT BGA-165 Tray
GSI Technology SRAM 2.5 or 3.3V 128K x 36 4M 56A magazzino
Min: 1
Mult.: 1

4 Mbit 128 k x 36 7.5 ns 150 MHz Parallel 3.6 V 2.3 V 130 mA, 140 mA 0 C + 70 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 512K x 18 9M 50A magazzino
Min: 1
Mult.: 1

9 Mbit 512 k x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 130 mA, 155 mA 0 C + 70 C SMD/SMT BGA-119 Tray
GSI Technology SRAM 2.5 or 3.3V 2M x 18 36M 1A magazzino
Min: 1
Mult.: 1

36 Mbit 2 M x 18 5.5 ns 250 MHz Parallel 3.6 V 2.3 V 235 mA, 275 mA - 40 C + 85 C SMD/SMT TQFP-100 Tray
GSI Technology SRAM 2.5 or 3.3V 1M x 18 18M 2A magazzino
Min: 1
Mult.: 1

18 Mbit 1 M x 18 6.5 ns 200 MHz Parallel 3.6 V 2.3 V 195 mA 0 C + 70 C SMD/SMT BGA-165 Tray