MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.

Risultati: 20
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Nome commerciale Confezione

STMicroelectronics MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET in D2PAK package 1.848A magazzino
Min: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 135 mOhms - 25 V, 25 V 2 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 1.557A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 21.5 A 135 mOhms - 25 V, 25 V 3 V 47 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V MDMesh 801A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 800 V MDMesh 652A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 3 V 70 nC - 65 C + 150 C 190 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFET in D2PAK package 1.882A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 150 mOhms - 25 V, 25 V 3 V 36 nC - 55 C + 150 C 170 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package 6.550A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.5 A 1.4 Ohms - 25 V, 25 V 3 V 8.5 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 550 mOhm typ., 5.5 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 1.767A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 5.5 A 660 mOhms - 25 V, 25 V 3.25 V 8.8 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV 2.794A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT PowerFLAT-5x6-4 N-Channel 1 Channel 600 V 7 A 415 mOhms - 25 V, 25 V 3.25 V 13 nC - 55 C + 150 C 52 W Enhancement MDmesh Reel, Cut Tape
STMicroelectronics MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFET in D2PAK package 1.387A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 26 A 125 mOhms - 25 V, 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package 965A magazzino
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 34 A 88 mOhms - 25 V, 25 V 3 V 57 nC - 55 C + 150 C 250 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V MDMesh 486A magazzino
1.00024/07/2026 previsto
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 17 A 295 mOhms - 30 V, 30 V 5 V 70 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A 698A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms - 30 V, 30 V 4 V 18 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V 0.25 17A Mdmesh 3A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 17 A 250 mOhms - 30 V, 30 V 3 V 70 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package 87A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 650 V 30 A 95 mOhms - 25 V, 25 V 4 V 71 nC - 55 C + 150 C 57 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V 0.27 ohm 13A MDmesh 913A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 260 mOhms - 25 V, 25 V 2 V 35 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
5.99502/07/2026 previsto
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 600 V 4.8 A 860 mOhms - 25 V, 25 V 3 V 10 nC - 55 C + 150 C 48 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-Ch 800 V 0.76 Ohm 6 A Zener-protected 400A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 800 V 6 A 950 mOhms - 30 V, 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-Ch 800V 0.76 Ohm 6 A MDmesh K5 Tempo di consegna, se non a magazzino 18 settimane
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 950 mOhms - 30 V, 30 V 4 V 16.5 nC - 55 C + 150 C 110 W Enhancement SuperMESH Tube
STMicroelectronics MOSFET N-CH 800V IPAK DPAK Mdmesh PWR MOSFET Tempo di consegna, se non a magazzino 16 settimane
Min: 1.000
Mult.: 1.000

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6.5 A 1.05 Ohms - 30 V, 30 V 4 V 18 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFET in I2PAK package Tempo di consegna, se non a magazzino 18 settimane
Min: 1.000
Mult.: 1.000
Si Through Hole TO-262-3 N-Channel 1 Channel 600 V 26 A 125 mOhms - 25 V, 25 V 3 V 45.5 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube