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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Nome commerciale
Confezione
Infineon Technologies MOSFET N-Ch 600V 10.6A DPAK-2
Scheda dati
7.256A magazzino
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 10.6 A 380 mOhms - 20 V, 20 V 3.5 V 19 nC - 55 C + 150 C 31 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
714A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
3.881A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22.4 A 162 mOhms - 20 V, 20 V 3.5 V 44 nC - 40 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM
Scheda dati
526A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 Ohms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM
Scheda dati
764A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 20.2 A 190 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_PRC/PRFRM
Scheda dati
430A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7.3 A 540 mOhms - 20 V, 20 V 3.5 V 12 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_PRC/PRFRM
Scheda dati
585A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20.2 A 171 mOhms - 20 V, 20 V 3.5 V 37 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER_LEGACY
Scheda dati
1.986A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 2.500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7.3 A 600 mOhms - 20 V, 20 V 4 V 12 nC - 55 C + 150 C 63 W Enhancement CoolMOS Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET HIGH POWER_LEGACY
Scheda dati
804A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET LOW POWER PRICE/PERFORM
Scheda dati
242A magazzino
3.00008/03/2027 previsto
MouseReel disponibile
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT ThinPAK-5 N-Channel 1 Channel 600 V 19.2 A 189 mOhms - 20 V, 20 V 3.5 V 37 nC - 40 C + 150 C 151 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
842A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
470A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
879A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
1.207A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 7.7A TO220FP-3
Scheda dati
39A magazzino
50002/07/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms - 20 V, 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 7.7A TO220FP-3
Scheda dati
736A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13.8 A 252 mOhms - 20 V, 20 V 3.5 V 25.5 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER_PRICE/PERFORM
Scheda dati
27A magazzino
5.000In ordine
Min: 1
Mult.: 1
: 1.000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 23.8 A 160 mOhms - 20 V, 20 V 4 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
113A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube

Infineon Technologies MOSFET HIGH POWER_LEGACY
Scheda dati
343A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 176 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
383A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3
Scheda dati
30A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 10.4A TO220FP-3
Scheda dati
8A magazzino
1.00010/09/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 23.8 A 144 mOhms - 20 V, 20 V 3.5 V 44 nC - 55 C + 150 C 34 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET N-Ch 600V 8.6A TO220FP-3
Scheda dati
532A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16.8 A 538 mOhms - 20 V, 20 V 4 V 31 nC - 55 C + 150 C 33 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
500A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 37.9 A 89 mOhms - 20 V, 20 V 3.5 V 70 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET HIGH POWER PRICE/PERFORM
Scheda dati
276A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 30 A 113 mOhms - 20 V, 20 V 3.5 V 56 nC - 55 C + 150 C 219 W Enhancement CoolMOS Tube