MOSFET di potenza R60/R65 N-Ch

I MOSFET di potenza N-Can R60/R65 di ROHM Semiconductor forniscono un’uscita a singolo canale con tensione drain-source 600 V o 650 V in package TO-220FM-3/SOT-223-3. I MOSFET R60/R65 presentano un intervallo di temperatura di funzionamento da -55°C a 150°C/155°C e opzioni di dissipazione di potenza di 7,8 W, 6,6 W, 12,3 W, 9,1 W, 40 W, 46 W, 48 W,, 53 W, 68 W, 74 W o 86 W. I MOSFET di potenza N-Can R60/R65 sono ideali per applicazioni di commutazione.

Risultati: 56
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Confezione
ROHM Semiconductor MOSFET TO220 600V 20A N-CH MOSFET 5.829A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 20 A 196 mOhms - 20 V, 20 V 4 V 60 nC - 55 C + 155 C 68 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 7A N-CH MOSFET 1.986A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 7 A 620 mOhms - 20 V, 20 V 5 V 14.5 nC - 55 C + 150 C 46 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 9A N-CH MOSFET 3.941A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 9 A 585 mOhms - 20 V, 20 V 5 V 16.5 nC - 55 C + 150 C 48 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 4A N-CH MOSFET 3.806A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 4 A 980 mOhms - 20 V, 20 V 4 V 15 nC - 55 C + 155 C 40 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 7A N-CH MOSFET 1.984A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 7 A 665 mOhms - 20 V, 20 V 4 V 20 nC - 55 C + 150 C 46 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 11A N-CH MOSFET 1.958A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 11 A 400 mOhms - 20 V, 20 V 5 V 22 nC - 55 C + 150 C 53 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 11A N-CH MOSFET 8.034A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 11 A 390 mOhms - 20 V, 20 V 4 V 32 nC - 55 C + 155 C 53 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 15A N-CH MOSFET 2.900A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 15 A 290 mOhms - 20 V, 20 V 5 V 27.5 nC - 55 C + 150 C 60 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 15A N-CH MOSFET 1.000A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 15 A 315 mOhms - 30 V, - 20 V, 20 V, 30 V 4 V 40 nC - 55 C + 150 C 60 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 24A N-CH MOSFET 4.919A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 24 A 165 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 155 C 74 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 20A N-CH MOSFET 946A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 20 A 196 mOhms - 20 V, 20 V 5 V 40 nC - 55 C + 150 C 68 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 20A N-CH MOSFET 1.742A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 20 A 205 mOhms - 20 V, 20 V 5 V 40 nC - 55 C + 150 C 68 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 9A N-CH MOSFET 1.964A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 9 A 585 mOhms - 20 V, 20 V 4 V 24 nC - 55 C + 150 C 48 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 6A N-CH MOSFET 1.963A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 6 A 830 mOhms - 20 V, 20 V 5 V 12 nC - 55 C + 150 C 40 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 9A N-CH MOSFET 1.727A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 9 A 535 mOhms - 20 V, 20 V 5 V 16.5 nC - 55 C + 150 C 48 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 4A N-CH MOSFET 1.987A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 4 A 1.05 Ohms - 20 V, 20 V 4 V 15 nC - 55 C + 150 C 40 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 15A N-CH MOSFET 3.954A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 15 A 315 mOhms - 20 V, 20 V 5 V 27.5 nC - 55 C + 150 C 60 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 24A N-CH MOSFET 1.992A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 4 V 70 nC - 55 C + 150 C 74 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 9A N-CH MOSFET 3.689A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 9 A 535 mOhms - 20 V, 20 V 4 V 23 nC - 55 C + 155 C 48 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 11A N-CH MOSFET 1.933A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 11 A 390 mOhms - 30 V, - 20 V, 20 V, 30 V 5 V 22 nC - 55 C + 150 C 53 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 15A N-CH MOSFET 3.431A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 15 A 290 mOhms - 20 V, 20 V 4 V 40 nC - 55 C + 155 C 60 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 24A N-CH MOSFET 1.995A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 24 A 185 mOhms - 20 V, 20 V 5 V 45 nC - 55 C + 150 C 74 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 30A N-CH MOSFET 3.955A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 30 A 130 mOhms - 30 V, - 20 V, 20 V, 30 V 4 V 85 nC - 55 C + 155 C 86 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 600V 24A N-CH MOSFET 1.932A magazzino
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Si Through Hole TO-220FM-3 N-Channel 1 Channel 600 V 24 A 165 mOhms - 20 V, 20 V 5 V 45 nC - 55 C + 150 C 74 W Enhancement Tube
ROHM Semiconductor MOSFET TO220 650V 4A N-CH MOSFET 1.960A magazzino
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Mult.: 1

Si Through Hole TO-220FM-3 N-Channel 1 Channel 650 V 4 A 1.05 Ohms - 20 V, 20 V 5 V 10 nC - 55 C + 150 C 40 W Enhancement Tube