DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

Risultati: 113
Seleziona Immagine Codice
 Produttore
Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Tecnologia
Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Nome commerciale
Confezione

Toshiba MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS
Scheda dati
3A magazzino
3017/07/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 82 mOhms - 30 V, 30 V 4.5 V 105 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel
Scheda dati
5A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 80 mOhms - 30 V, 30 V 3 V 115 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFET MOSFET NChannel 068ohm DTMOS
Scheda dati
50A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 35 A 68 mOhms - 30 V, 30 V 3.5 V 100 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube

Toshiba MOSFET MOSFET NChtrr130ns 0.08ohm DTMOS
Scheda dati
9A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 35 A 80 mOhms - 30 V, 30 V 4.5 V 115 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A
Scheda dati
85A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 50 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC
Scheda dati
13A magazzino
5016/03/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC
Scheda dati
25A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 38.8 A 65 mOhms - 30 V, 30 V 2.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF
Scheda dati
40A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 38.8 A 55 mOhms - 30 V, 30 V 3.7 V 110 nC - 55 C + 150 C 270 W Enhancement DTMOSIV Tube

Toshiba MOSFET TO247(OS) PD=400W 1MHz PWR MOSFET TRNS
Scheda dati
30A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 57 mOhms - 30 V, 30 V 4.5 V 185 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFET N-Ch Power MOSFET Transistor
Scheda dati
57A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 49.2 A 55 mOhms - 30 V, 30 V 2.5 V 160 nC + 150 C 400 W Enhancement Tube
Toshiba MOSFET N-Ch 61.8A 400W FET 600V 3500pF 180nC
Scheda dati
25A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-3PN-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 45mOhm 61.8A 400W 6500pF
Scheda dati
104A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 36 mOhms - 30 V, 30 V 3 V 205 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 40mOhm 61.8A 400W 6500pF
Scheda dati
10A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 61.8 A 33 mOhms - 30 V, 30 V 3.7 V 180 nC - 55 C + 150 C 400 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC
Scheda dati
169A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC
Scheda dati
197A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 6.2 A 680 mOhms - 30 V, 30 V 3.7 V 12 nC - 55 C + 150 C 60 W DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel
Scheda dati
86A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 540 mOhms - 30 V, 30 V 3 V 16 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 7A 30W FET 600V 490pF 15nC
Scheda dati
44A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 7 A 600 mOhms - 30 V, 30 V 2.7 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET Power MOSFET N-Channel
Scheda dati
114A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 6.8 A 640 mOhms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube
Toshiba MOSFET N-Ch 7A 60W FET 600V 490pF 15nC
Scheda dati
709A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 7 A 500 mOhms - 30 V, 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET Power MOSFET N-Channel
Scheda dati
446A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
Nastrati: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 6.8 A 660 mOhms - 30 V, 30 V 2.5 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Reel, Cut Tape, MouseReel
Toshiba MOSFET N-Ch DTMOSIV 600 V 60W 490pF 15nC 7A
Scheda dati
144A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-251-3 N-Channel 1 Channel 600 V 7 A 500 mOhms - 30 V, 30 V 3.7 V 15 nC - 55 C + 150 C 60 W Enhancement DTMOSIV Tube
Toshiba MOSFET POWER MOSFET TRANSISTOR TO-247-4L PD=190W F=1MHZ
Scheda dati
40In ordine
Min: 1
Mult.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 24 A 110 mOhms - 10 V, 10 V 3 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
Scheda dati
8015/06/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 15.8 A 160 mOhms - 30 V, 30 V 3.7 V 30 nC - 55 C + 150 C 130 W Enhancement DTMOSIV Tube

Toshiba MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
Scheda dati
3020/02/2026 previsto
Min: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30.8 A 73 mOhms - 30 V, 30 V 3.7 V 86 nC - 55 C + 150 C 230 W Enhancement DTMOSIV Tube
Toshiba MOSFET TO-220SIS PD=30W 1MHz PWR MOSFET TRNS
Scheda dati
Tempo di consegna, se non a magazzino 32 settimane
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 9.7 A 380 mOhms - 30 V, 30 V 2.7 V 20 nC - 55 C + 150 C 30 W Enhancement DTMOSIV Tube