IGBT7 Discretes

I componenti discreti IGBT7 di Infineon Technologies sono la 7° generazione di IGBT TRENCHSTOP™ creati con tecnologia micro-pattern trench. L'avanzata tecnologia offre controllo e prestazioni senza pari, con conseguente significativa riduzione di perdite, miglioramento dell'efficienza e aumento della densità di potenza nelle applicazioni.

Risultati: 45
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Package/involucro Stile di montaggio Configurazione Tensione collettore-emettitore VCEO Max Tensione di saturazione collettore-emettitore Tensione gate-emettitore massima Collettore a corrente continua a 25 °C Pd - Dissipazione di potenza Temperatura di lavoro minima Temperatura di lavoro massima Serie Confezione
Infineon Technologies IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO-247 package 7.672A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 76 A 230.8 W - 40 C + 175 C IGBT7 T7 Tube


Infineon Technologies IGBTs 1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package 1.865A magazzino
Min: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 21 A 106 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 20 A IGBT with anti-parallel diode in TO-247 package 3.166A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 40 A 136 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT7 S7 in TO247PLUS-3pin package 1.594A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT7 S7 in TO247PLUS-3pin package 348A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT7 S7 in TO247PLUS-3pin package 313A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 1.125A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 188 A 824 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 120 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 650A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 216 A 1.004 kW - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package 368A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 293A magazzino
Min: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT7 S7 with anti-parallel diode in TO247PLUS-3pin package 436A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package 721A magazzino
Min: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package 961A magazzino
Min: 1
Mult.: 1

IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-4 package 358A magazzino
Min: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 435A magazzino
Min: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 700A magazzino
Min: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 332A magazzino
Min: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package Tempo di consegna, se non a magazzino 19 settimane
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 27A magazzino
720In ordine
Min: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package 115A magazzino
24023/02/2026 previsto
Min: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package 362A magazzino
Min: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO-247-3 HCC package 199A magazzino
24021/05/2026 previsto
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 427 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 40 A IGBT with anti-parallel diode in TO-247-3 HCC package 222A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 208 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247-3 HCC package 232A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 249 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package 202A magazzino
Min: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 341 W - 40 C + 175 C IGBT7 H7 Tube