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Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Nome commerciale
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
641A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
329A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET discrete 1200 V in TO247-4 package
Scheda dati
400A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 4.7 A 350 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
437A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
434A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
3.715A magazzino
3.000In ordine
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 9.8 A 450 mOhms - 10 V, + 20 V 4.5 V 11 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
1.944A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 7.4 A 650 mOhms - 10 V, + 20 V 4.5 V 8 nC - 55 C + 175 C 88 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
1.125A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 41 mOhms - 7 V, + 20 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
934A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 26 A 125 mOhms - 7 V, + 20 V 5.1 V 23 nC - 55 C + 175 C 136 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
863A magazzino
1.13728/05/2026 previsto
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 A 189 mOhms - 7 V, + 20 V 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
1.379A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 4.7 A 468 mOhms - 7 V, + 20 V 5.1 V 5.9 nC - 55 C + 175 C 65 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Scheda dati
238A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Scheda dati
379A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 5.7 V 13 nC - 55 C + 150 C 94 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
1.300A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
477A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Scheda dati
48011/06/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Scheda dati
388A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
Scheda dati
417A magazzino
48025/06/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 4.7 A 455 mOhms - 7 V, + 23 V 5.7 V 5.3 nC - 55 C + 150 C 60 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Scheda dati
65A magazzino
960In ordine
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 36 A 78 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 150 C 150 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Scheda dati
199A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 117 mOhms - 7 V, + 23 V 5.7 V 21 nC - 55 C + 150 C 115 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
Scheda dati
63A magazzino
1.920In ordine
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 13 A 220 mOhms - 7 V, + 23 V 5.7 V 8.5 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
342A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 20 A 142 mOhms - 5 V, + 23 V 5.7 V 15 nC - 55 C + 150 C 75 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
18A magazzino
1.200In ordine
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 59 A 34 mOhms - 5 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
29A magazzino
24029/04/2027 previsto
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
Scheda dati
11.00002/07/2026 previsto
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC