MOSFET di potenza OptiMOS™ 5

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) as well as motor control, solar micro inverters and fast switching DC/DC converter applications.
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Risultati: 85
Seleziona Immagine Codice Produttore Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità. Qtà RoHS Modello ECAD Tecnologia Stile di montaggio Package/involucro Polarità transistor Numero di canali Vds - Tensione di rottura drain-source Id - corrente di drain continua Rds On - Drain-source sulla resistenza Vgs - Tensione gate-source Vgs th - Tensione di soglia gate-source Qg - Carica del gate Temperatura di lavoro minima Temperatura di lavoro massima Pd - Dissipazione di potenza Modalità canale Qualifica Nome commerciale Confezione
Infineon Technologies MOSFET IFX FET 60V 4.772A magazzino
Min: 1
Mult.: 1
: 6.000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 60 V 21 A 3 mOhms - 20 V, 20 V 3.3 V 49 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS 49.325A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 40 V 100 A 1 mOhms - 20 V, 20 V 1.2 V 133 nC - 55 C + 150 C 139 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 4.375A magazzino
Min: 1
Mult.: 1
: 6.000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 100 V 13 A 6.5 mOhms - 20 V, 20 V 3.8 V 43 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET MOSFET N CH 60V 95A TO-220AB 58.029A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 95 A 4.9 mOhms - 20 V, 20 V 3.7 V 75 nC - 55 C + 175 C 125 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFET IFX FET >100-150V 3.872A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 174 A 4.4 mOhms - 20 V, 20 V 4.6 V 67 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V 2.869A magazzino
Min: 1
Mult.: 1
: 2.000
Si SMD/SMT N-Channel 1 Channel 60 V 399 A 1.1 Ohms - 20 V, 20 V 3.3 V 110 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 8.096A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 100 A 1.6 mOhms - 20 V, 20 V 1.2 V 44 nC - 55 C + 150 C 69 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET >80 - 100V 1.478A magazzino
Min: 1
Mult.: 1
: 2.000
Si SMD/SMT N-Channel 1 Channel 100 V 248 A 2.6 mOhms - 20 V, 20 V 3.8 V 89 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >100-150V 1.681A magazzino
Min: 1
Mult.: 1
: 2.000

Si SMD/SMT N-Channel 1 Channel 150 V 122 A 6.3 mOhms - 20 V, 20 V 4.6 V 47 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 15V-30V 3.537A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 25 V 40 A 960 uOhms - 16 V, 16 V 2 V 92 nC - 55 C + 150 C 69 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 4.073A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT N-Channel 1 Channel 60 V 137 A 3 mOhms - 20 V, 20 V 3.3 V 39 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET OptiMOS 5 low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down center-gate package with best-price performance 3.500A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 30 V 224 A 1.15 mOhms 16 V 2 V 40 nC - 55 C + 175 C 107 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Drain-Down package 3.493A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 259 A 1.5 mOhms 20 V 3.3 V 70 nC - 55 C + 175 C 188 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET >80 - 100V 5.096A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT N-Channel 1 Channel 100 V 85 A 6.5 mOhms - 20 V, 20 V 3.8 V 34 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 Power-Transistor,60V 2.945A magazzino
Min: 1
Mult.: 1
: 3.000

Si SMD/SMT TSON-12 N-Channel 1 Channel 60 V 510 A 1 mOhms - 20 V, 20 V 2.8 V 190 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET OptiMOS 5 power MOSFET 100 V in a TO-220 package 965A magazzino
Min: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 120 A 2.3 mOhms - 20 V, 20 V 3.8 V 168 nC - 55 C + 175 C 375 W Enhancement OptiMOS Tube
Infineon Technologies MOSFET IFX FET > 60-80V 3.655A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TSON-8 N-Channel 1 Channel 80 V 99 A 4.6 mOhms - 20 V, 20 V 2.3 V 38 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET 60 V, N-Ch, 2.2 m? max, Logic Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5 7.164A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 170 A 2.2 mOhms - 20 V, 20 V 1.7 V 77 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5 3.615A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 120 A 3.23 mOhms - 20 V, 20 V 2.8 V 47 nC - 55 C + 175 C 94 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel


Infineon Technologies MOSFET IFX FET 60V 817A magazzino
Min: 1
Mult.: 1
: 1.800

Si SMD/SMT HDSOP-16 N-Channel 1 Channel 60 V 311 A 1.2 mOhms - 20 V, 20 V 2.1 V 106 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 15V-30V 2.124A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 25 V 789 A 290 uOhms - 16 V, 16 V 2 V 88 nC - 55 C + 150 C 333 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 15V-30V 12A magazzino
6.00015/04/2027 previsto
Min: 1
Mult.: 1
: 6.000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 25 V 47 A 580 uOhms - 16 V, 16 V 2 V 82 nC - 55 C + 150 C 2.1 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 15V-30V 8.645A magazzino
Min: 1
Mult.: 1
: 6.000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 25 V 47 A 580 uOhms - 16 V, 16 V 2 V 82 nC - 55 C + 150 C 2.1 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET IFX FET 60V 4.456A magazzino
Min: 1
Mult.: 1
: 5.000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 60 V 151 A 2.2 mOhms - 20 V, 20 V 2.3 V 53 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFET IFX FET 60V 5.332A magazzino
Min: 1
Mult.: 1
: 6.000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 60 V 151 A - 20 V, 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape