Risultati: 53
Seleziona Immagine Codice
 Produttore
Descrizione Scheda dati Disponibilità Prezzi (EUR) Filtra i risultati nella tabella per prezzo unitario in base alla quantità.
Qtà RoHS Modello ECAD Stile di montaggio
Package/involucro
Polarità transistor
Numero di canali
Vds - Tensione di rottura drain-source
Id - corrente di drain continua
Rds On - Drain-source sulla resistenza
Vgs - Tensione gate-source
Vgs th - Tensione di soglia gate-source
Qg - Carica del gate
Temperatura di lavoro minima
Temperatura di lavoro massima
Pd - Dissipazione di potenza
Modalità canale
Nome commerciale
Infineon Technologies MOSFET SiC CoolSiC MOSFET 650 V, 60 mohm G2
Scheda dati
144A magazzino
24001/06/2026 previsto
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET 650 V, 10 mohm G2
Scheda dati
10A magazzino
720In ordine
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 144 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
1.127A magazzino
MouseReel disponibile
Min: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 115 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 416 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
1.295A magazzino
1.80008/10/2026 previsto
MouseReel disponibile
Min: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 15 mOhms Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
1.756A magazzino
Min: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 20 mOhms Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
1.267A magazzino
Min: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 40 mOhms Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
1.771A magazzino
Min: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 50 mOhms Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
1.763A magazzino
Min: 1
Mult.: 1
: 1.800

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 60 mOhms Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
590A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 93 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
890A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 103 A 18 mOhms - 7 V, + 23 V 5.6 V 79 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
303A magazzino
Min: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 N-Channel 1 Channel 50 mOhms Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
146A magazzino
Min: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 N-Channel 1 Channel 60 mOhms Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
246A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
311A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
7A magazzino
960In ordine
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 210 A 8.5 mOhms - 18 V, + 18 V 5.6 V 439 nC - 55 C + 175 C 625 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
251A magazzino
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 62 mOhms - 7 V, + 23 V 5.6 V 22 nC - 55 C + 175 C 153 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
5A magazzino
2.00029/10/2026 previsto
Min: 1
Mult.: 1
: 2.000

SMD/SMT TO-263-7 N-Channel 1 Channel 40 mOhms Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
25A magazzino
480In ordine
Min: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 26.6 A 95 mOhms - 7 V, + 23 V 5.6 V 14.9 nC - 55 C + 175 C 111 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET 650 V, 26 mohm G2
Scheda dati
11A magazzino
720In ordine
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 64 A 33 mOhms - 10 V, + 25 V 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC CoolSiC MOSFET 650 V, 60 mohm G2
Scheda dati
33A magazzino
240In ordine
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 32.8 A 73 mOhms - 10 V, + 25 V 5.6 V 19 nC - 55 C + 175 C 130 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
1.450In ordine
Min: 1
Mult.: 1
: 750

SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 196 A 8.5 mOhms - 7 V, + 23 V 5.6 V 179 nC - 55 C + 175 C 937 W Enhancement
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
4.000In ordine
MouseReel disponibile
Min: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 131 A 18 mOhms - 7 V to 23 V 4.5 V 148 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
2.00001/06/2026 previsto
Min: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 24 mOhms - 7 V, + 23 V 5.6 V 57 nC - 55 C + 175 C 440 W Enhancement
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
3.97228/01/2027 previsto
Min: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 58.7 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 277 W Enhancement
Infineon Technologies MOSFET SiC SILICON CARBIDE MOSFET
Scheda dati
15.600In ordine
Min: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46 A 49 mOhms - 7 V, + 23 V 5.6 V 28 nC - 55 C + 175 C 172 W Enhancement CoolSiC