SemiQ SiC Schottky Discrete Diodes
SemiQ SiC Schottky Discrete Diodes feature near-zero switching loss and reduced heat dissipation, increasing efficiency and requiring smaller heatsinks. The SiC Schottky Discrete Diodes are easy to parallel with fast, temperature-independent switching. The SemiQ SiC Schottky Discrete Diodes are designed for solar inverters, power supplies, motor drives, and charging station applications.
Features
- Unipolar rectifier with surge current
- Zero reverse recovery current
- Fast, temperature-independent switching
- Avalanche tested
Applications
- Solar Inverters
- Switch mode power supplies, UPS
- Power factor correction
- EV charging stations
Specifications
- 650V/1200V/1700V Maximum reverse voltage
- -55°C to +175°C Operating junction temperature
2-Pin & 3-Pin Typical Application
Associated Products
SemiQ SiC Schottky Diode Modules
Offers enhanced performance with robust SiC chipsets and minimized parasitic package elements.
SemiQ SiC MOSFET Power Modules
Provides low on-state resistance at high temperatures with excellent switching performance.
SemiQ 650V, 6A SiC Schottky Diode
Operates with zero switching loss to greatly increase efficiency and reduce heat dissipation.
Pubblicato: 2020-08-31
| Aggiornato: 2024-12-03