Rectron RM135N100HD N-Channel Super Trench Power MOSFET
Rectron RM135N100HD N-Channel Super Trench Power MOSFET uses Super Trench technology that is uniquely optimized to provide efficient high-frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
The Rectron RM135N100HD N-Channel Super Trench Power MOSFET is available in a compact TO-263-2L package, ideal for space-constrained applications.
Features
- 100V drain-source voltage (VDS)
- 135A continuous drain current (ID)
- 500A pulsed drain current (IDM)
- 3.7mΩ typical RDS(ON)
- 92nC total gate charge (Qg)
- Excellent Qg x RDS(on)
- 210W maximum power dissipation (PD)
- 6400pF input capacitance (CISS)
- 731pF output capacitance (COSS)
- -55°C To 175°C operating junction and storage temperature range (TJ, TSTG)
- TO-263-2L package
- Pb-free lead plating
- 100% UIS tested
Applications
- DC-DC converters
- High-frequency switching
- Synchronous rectification
Related Products
Rectron RM150N60HD N-Channel Enhancement Mode Power MOSFET
Features advanced Trench technology and design to provide excellent RDS(ON) and a low gate charge.
Test Circuits
Package Outlinie
Pubblicato: 2022-09-19
| Aggiornato: 2022-09-22