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Vishay Semiconductors VS-VF Single-Switch Silicon Carbide Power MOSFETs

Vishay Semiconductor VS-VF Single-Switch Silicon Carbide Power MOSFETs are high-performance silicon carbide (SiC) MOSFETs. The high blocking voltage, low on-resistance, high-speed switching, and low capacitance make these Vishay Semiconductor MOSFETs ideal for high-frequency switching applications, including solar inverters and EV chargers.

Features

  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitance
  • Soft body diode with low reverse recovery
  • Maximum +175°C junction temperature
  • UL-approved file E78996

Applications

  • EV chargers
  • Server and telecom PSU
  • UPS
  • Solar inverters
  • SMPS
  • DC-DC converters

Circuit Configurations

Mechanical Drawing - Vishay Semiconductors VS-VF Single-Switch Silicon Carbide Power MOSFETs
Mechanical Drawing - Vishay Semiconductors VS-VF Single-Switch Silicon Carbide Power MOSFETs
Mechanical Drawing - Vishay Semiconductors VS-VF Single-Switch Silicon Carbide Power MOSFETs
Mechanical Drawing - Vishay Semiconductors VS-VF Single-Switch Silicon Carbide Power MOSFETs
Mechanical Drawing - Vishay Semiconductors VS-VF Single-Switch Silicon Carbide Power MOSFETs
View Results ( 5 ) Page
Codice prodotto Scheda dati Id - corrente di drain continua Rds On - Drain-source sulla resistenza Pd - Dissipazione di potenza Vgs - Tensione gate-source
VS-SF100SA120 VS-SF100SA120 Scheda dati 98 A 32.6 mOhms 468 W - 8 V, 19 V
VS-SF150SA120 VS-SF150SA120 Scheda dati 126 A 16.8 mOhms 535 W - 8 V, 19 V
VS-SF200SA120 VS-SF200SA120 Scheda dati 127 A 12.1 mOhms 750 W - 8 V, 15 V
VS-SF50LA120 VS-SF50LA120 Scheda dati 38 A 43 mOhms 136 W - 4 V, 15 V
VS-SF50SA120 VS-SF50SA120 Scheda dati 49 A 47 mOhms 238 W - 4 V, 15 V
Pubblicato: 2026-02-18 | Aggiornato: 2026-02-24