Texas Instruments TPS65295EVM-079 Evaluation Module

Texas Instruments TPS65295EVM-079 Evaluation Module facilitates an extensive evaluation of the features and performance of the TPS65295. The TPS65295 provides a complete power solution for a DDR4 memory system in a compact package. The TPS65295 meets the JEDEC standard for DDR4 power-up and power-down sequence requirements. Some modifications can be made to the TPS65295EVM-079 Evaluation Module to test performance at different input and output voltages, currents, and switching frequencies. The Texas Instruments TPS65295EVM-079 is designed and tested for VIN = 4.5V to 18V and has a junction temperature of 25°C for all measurements unless otherwise noted.

Features

  • 4.5V to 18V input voltage range 
  • 1.2V VDDQ, 2.5V VPP, 0.6V VTT output voltage 
  • 12A integrated 17mΩ/6mΩ Rdson FET converter
  • Complete DDR4 power solution
  • D-CAP3TM architecture to enable POSCAP and MLCC output capacitor usage
  • 3mm x 3mm HotRod™ QFN package

Headers Description & Jumper Placement

Location Circuit - Texas Instruments TPS65295EVM-079 Evaluation Module
Pubblicato: 2019-03-20 | Aggiornato: 2024-01-19