pSemi PE42447 UltraCMOS® SP4T RF Switch

pSemi PE42447 UltraCMOS® SP4T RF Switch supports frequency ranges across 10MHz to 8GHz and is manufactured on pSemi's UltraCMOS process, a patented advanced form of silicon-on-insulator (SOI) technology. This high-power SP4T RF switch delivers low insertion loss of 0.4dB at 2.6GHz and 0.48dB at 3.8GHz, high linearity of 85dBm, and high input power handling capability of 40dBm RMS and 50dBm peak. The PE42447 is packaged on a 20-lead, 4mm x 4mm LGA package and tolerates an ambient temperature of up to +115°C. pSemi PE42447 UltraCMOS® SP4T RF Switch is ideal for hybrid analog beamforming, 4G / 4.5G TD-LTE macro / microcell / remote radio head (RRH), and 5G massive multi-input multi-output (MIMO) applications. No blocking capacitors are needed if DC voltage is not present on the RF ports.

Features

  • Manufactured on pSemi's UltraCMOS process, a patented advanced form of SOI technology
  • Low insertion loss
    • 0.4dB at 2.6GHz typical
    • 0.48dB at 3.8GHz typical
  • High linearity IIP3 of 85dBm
  • High power handling
    • 40dBm RMS
    • 50dBm peak
  • +115°C operating temperature
  • 20-lead, 4mm x 4mm LGA package
  • RoHS and REACH compliant

Applications

  • Analog hybrid beamforming RF front-end
  • 5G massive MIMO active antenna system (AAS)
  • 4G / 4.5G TD-LTE macro / micro cell / RRH

Functional Diagram

Block Diagram - pSemi PE42447 UltraCMOS® SP4T RF Switch
Pubblicato: 2024-06-20 | Aggiornato: 2025-05-30