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NXP Semiconductors AFV10700H RF Power LDMOS Transistor

NXP Semiconductors AFV10700H RF Power LDMOS Transistor is designed for pulse applications operating at 1030MHz to 1090MHz. This LDMOS Transistor can also be used over the 960MHz to 1215MHz band at reduced power. This device is suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME, and other complex pulse chains.

Features

  • Internally input and output matched for broadband operation and ease of use
  • The device can be used single-ended, push-pull, or quadrature configuration
  • Qualified up to a maximum of 55VDD operation
  • High ruggedness, handles > 20:1VSWR
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
  • Recommended drivers: MRFE6VS25N (25W) or MRF6V10010N (10W)
  • RoHS Compliant
  • It is included in NXP Product Longevity Program with assured supply for a minimum of 15 years after launch.

Specifications

  • 1030MHz to 1090MHz frequency 
  • 50V supply voltage 
  • 700W peak output power 
  • Pulse test signal
  • 19.2dB at 1030MHz power gain
  • 58.5% efficiency 
  • 0.03°C/W thermal resistance 
  • Input and output impedance matching
  • AB Class 

Development Tools

NXP Semiconductors AFV10700H Reference Circuit

Enables rapid evaluation and prototyping of the NXP AFV1070 RF Power Transistor.

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Pubblicato: 2017-08-18 | Aggiornato: 2025-12-16