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Nexperia MOSFET automobilistici BUKx

I MOSFET automobilistici NXP BUKx sono MOSFET di livello logico a canale N che presentano la tecnologia TrenchMOS. Questo prodotto è stato progettato e omologato secondo la normativa AEC Q101 per l'uso nelle applicazioni automobilistiche ad alte prestazioni.

Caratteristiche

  • AEC-Q101 compliant
  • Repetitive avalanche rated
  • Enhancement channel mode
  • N-channel transistor polarity
  • TrenchMOS technology
  • 1- to 2-channels
  • Single or dual configuration
  • Suitable for thermally demanding environments due to +175°C rating
  • Multiple package/case options

Applicazioni

  • 12V automotive systems
  • Motors, lamps, and solenoid control
  • Start-stop micro-hybrid applications
  • Transmission control
  • Ultra-high performance power switching

Specifiche

  • 30V to 100V drain-source breakdown voltage range
  • 1.4V to 3V gate-source threshold voltage range
  • 32W to 357W power dissipation range
  • 1.97mΩ to 98mΩ on-drain-source resistance range
  • 10nC to 169nC gate charge range
  • 11.8A to 120A continuous drain current range
  • ±10V, -10V/+16V, ±15V, and ±20V gate-source voltage options
  • -55°C to +175°C operating temperature range

Video

Additional Resources

Pubblicato: 2013-04-08 | Aggiornato: 2025-04-07