Murata WLSC Wire-Bondable Low-Profile Si Capacitors
Murata WLSC Wire-Bondable Vertical Low-Profile (100µm thick) Silicon Capacitors target RF High Power applications for wireless communication (5G, etc.), radar, and data broadcasting systems. These capacitors are suitable for DC decoupling, matching network, and harmonic/noise-filtering functions. They are developed with a semiconductor process that enables the integration of high capacitance density from 1.55nF/mm2 to 250nF/mm2 (with a breakdown voltage of 450V to 11V, respectively). The Murata WLSC capacitors are cured at a high temperature (above +900°C), generating a highly pure oxide. This technology provides capacitor stability over the full operating DC voltage and temperature range. In addition, the intrinsic properties of the silicon show a low dielectric absorption and a low to zero piezoelectric effect, resulting in no memory effect.Features
- 100µm ultra-low profile
- Low leakage current
- High stability (temperature and voltage)
- Negligible capacitance loss through aging
- Compatible with standard wire bonding assembly (ball and wedge)
Applications
- Radar, wireless infrastructure communication, data broadcasting
- Standard wire bonding approach (top and bottom gold metallization) because of pad flatness
- High-reliability applications
- Downsizing, low-profile applications (100µm)
- Decoupling, DC noise, harmonic filtering, matching networks (GaN power amplifier, LDMOS)
- Fully compatible with single-layer ceramic capacitors and metal oxide semiconductors
Specifications
- 47pF to 22nF capacitance range
- ±15% capacitance tolerance
- Temperature range
- -55°C to +150°C operating
- -70°C to +165°C storage
- +60ppm/K temperature coefficient
- 11V, 30V, 50V, 100V, 150V, and 450V breakdown voltage
- <0.001%/1000 hours aging
- 100µm thickness
Pubblicato: 2019-10-24
| Aggiornato: 2025-07-02
